IPD50N06S409ATMA2 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N06S409ATMA2 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $1.21
Technology N-Channel MOSFET (OptiMOS) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Tc 50 A β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-11 (DPAK) TDSON-8 (SuperSO8) 5x6 mm
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] Yes / Yes
Continuous Drain Current (ID, Tc=25C) β€” 161 A
Continuous Drain Current (ID, Ta=25C) β€” 28 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V β€” 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ β€” 1.7 V
Total Gate Charge Qg typ β€” 85 nC
Power Dissipation PD (Tc=25C) β€” 94 W
Operating Temperature Range β€” -55 C to +150 C
MSL Level β€” 1 (unlimited)
Avalanche Rated β€” Yes

Datasheets & Resources

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