IPD50N06S409ATMA2 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N06S409ATMA2 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.82
Technology N-Channel MOSFET (OptiMOS) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at Tc 50 A β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 4 V (max, typical)
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +175 C
Package PG-TO252-3-11 (DPAK) β€”
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant β€”
Lead-Free / Halogen-Free [DATA_NEEDED] β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
On-Resistance RDS(on) max β€” 7.6 mOhm
Power Dissipation (Ta) β€” 2.3 W
Power Dissipation (Tc) β€” 65 W
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)
FET Type β€” 2x N-Channel MOSFET array

Datasheets & Resources

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