IPD50N06S409ATMA2 vs BSC076N04NDATMA1 Perbandingan
Perbandingan bersamaan detil IPD50N06S409ATMA2 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD50N06S409ATMA2 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (max, typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | -55 C to +175 C |
| Paket | PG-TO252-3-11 (DPAK) | — |
| Jumlah Pin | 3 (2 + Tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Paket / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |