IPD50N10S3L16ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IPD50N10S3L16ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
IPD50N10S3L16ATMA1 β Active
Specification Comparison
| Parameter | IPD50N10S3L16ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD50N10S3L16ATMA1 | β |
| Series | OptiMOS-T | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, T_C=25C) | 50 A | β |
| Pulsed Drain Current (I_DM) | 200 A | β |
| R_DS(on) max @ V_GS=10V | 15 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | 2.5 V (typ) | β |
| Power Dissipation (P_D, T_C=25C) | 100 W | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |