IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
MPN: IPD50N10S3L16ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.95 | $19.50 |
| 100 | $1.62 | $162.00 |
| 500 | $1.34 | $670.00 |
| 1,000 | $1.08 | $1,080.00 |
| 2,500 | $0.89 | $2,225.00 |
IPD50N10S3L16ATMA1 Overview
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device whose channel conductance is modulated by the gate-source voltage. Within the broader hierarchy: MOSFET → transistor → discrete semiconductor → semiconductor. OptiMOS-T is Infineon's trench-technology power MOSFET family optimized for low R<sub>DS(on)</sub> per die area, low gate charge, and high avalanche ruggedness, making it the workhorse of automotive and industrial switched-mode power stages.
Key features of the IPD50N10S3L16ATMA1 include a maximum drain-source voltage V<sub>DS</sub>=100 V, continuous drain current I<sub>D</sub>=50 A at T<sub>C</sub>=25 °C, pulsed current capability up to 200 A, and gate threshold V<sub>GS(th)</sub>=2.5 V typical. The DPAK (PG-TO252-3-11) package provides low thermal resistance with a tab that doubles as the drain connection, enabling direct PCB copper heatsinking.
The device uses Infineon's third-generation OptiMOS-T3 trench process, which significantly reduces on-resistance per unit area and lowers gate charge Q<sub>G</sub> compared to planar MOSFETs of the same voltage class. This combination delivers high efficiency at high switching frequencies, reduced driver losses, and good EMI behavior in hard-switched topologies such as synchronous buck converters and half-bridges.
Typical applications include automotive 48 V mild-hybrid inverter stages, DC-DC converters, motor control H-bridges, battery protection circuits, and high-current load switching. The part is also commonly used in industrial switched-mode power supplies, solenoid drivers, and Class-D audio amplifiers where low R<sub>DS(on)</sub> minimizes conduction loss.
When designing with this MOSFET, place the gate-driver as close as possible to the gate pin to limit parasitic inductance, and use a Kelvin-source connection if available in the gate-driver layout. The DPAK tab is electrically the drain — isolation from the heatsink may be required depending on circuit topology.
This page synthesizes distributor stock, drop-in alternatives, parametric comparisons, and practical design notes beyond the manufacturer datasheet summary.
Drop-in alternatives for IPD50N10S3L16ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD50N10S3L16ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Mounting Type, Automotive Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB50N10S3L16ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPI50N10S3L16ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC076N04NDATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →IPC50N04S5L5R5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.36 / Unit
View Datasheet →IPD50N06S409ATMA2
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.49 / Unit
View Datasheet →IAUC120N06S5L015ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.92 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.62 / Unit
View Datasheet →IPD50N10S3L16ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD50N10S3L16ATMA1 |
| Series | OptiMOS-T |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, T_C=25C) | 50 A |
| Pulsed Drain Current (I_DM) | 200 A |
| R_DS(on) max @ V_GS=10V | 15 mΩ |
| Gate Threshold Voltage (V_GS(th)) | 2.5 V (typ) |
| Power Dissipation (P_D, T_C=25C) | 100 W |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
| Packaging | Tape & Reel |
IPD50N10S3L16ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input — V_GS drives channel conduction |
| Pin 2 | Drain — Drain terminal, also connected to the metal tab; main load-current path |
| Pin 3 | Source — Source terminal; return path for drain current |
| Pin Tab | Drain (Tab) — Backside metal tab — electrically the drain, used for PCB heatsinking |
Safe Operating Area (DC, T_C=25C)
Typical Applications
IPD50N10S3L16ATMA1 is suitable for 7 applications: Automotive 48V Mild-Hybrid Inverter, Industrial DC-DC Converter, Brushless DC Motor Drive H-Bridge, Battery Protection and Load Switch, Class-D Audio Amplifier Output Stage, Solenoid and Relay Driver, Power ORing and Hot-Swap Controller.
Automotive 48V Mild-Hybrid Inverter
The IPD50N10S3L16ATMA1 is the switching element in 48 V mild-hybrid inverter stages where its 100 V V_DS rating provides headroom above the 48 V nominal bus and absorbs load-dump transients. With 50 A continuous drain current and 15 mΩ R_DS(on), two devices form a half-bridge delivering peak motor currents in the 100-200 A range while keeping conduction loss below 50 W per device. The AEC-Q101 qualification and -55 to +175 C junction range make it a drop-in fit for automotive inverter modules that must survive under-hood thermal stress. Engineers typically pair it with Infineon EiceDriver gate-driver ICs such as 1ED3124MC12HXUMA1 to achieve reliable switching at high dV/dt.
Recommended
Industrial DC-DC Converter
In 48 V input to 12 V output synchronous buck converters, the IPD50N10S3L16ATMA1 serves as the high-side control FET. Its 15 mΩ R_DS(on) at V_GS=10 V keeps conduction loss low at the typical 10-20 A load of telecom and industrial 48 V bus converters. The OptiMOS-T3 trench technology provides low gate charge Q_G (approximately 50 nC typical) which enables switching frequencies in the 100-200 kHz range without driving losses overwhelming conduction savings. The DPAK outline's drain tab provides the heatsinking required at continuous output current. Pair the part with a low-voltage synchronous rectifier such as BSC076N04NDATMA1 for the low-side position.
Recommended
Brushless DC Motor Drive H-Bridge
Brushless DC motor drives in industrial automation and e-mobility applications use the IPD50N10S3L16ATMA1 as the switching element in three-phase H-bridges. With 100 V V_DS rating, the MOSFET handles motor back-EMF peaks above the nominal 24 V or 48 V rail. Four MOSFETs per bridge operating at 20 kHz PWM deliver up to 30 A continuous phase current while staying within the 100 W per-device power dissipation limit. The DPAK footprint allows direct PCB copper heatsinking and simplified thermal management in compact motor-drive modules.
Recommended
Battery Protection and Load Switch
High-current battery protection in 24-48 V lithium battery packs uses the IPD50N10S3L16ATMA1 as the load switch element. Its 100 V V_DS rating covers transient overvoltage events during battery disconnection while the 15 mΩ R_DS(on) at 50 A continuous current keeps conduction loss below 40 W at full load. The part's low R_DS(on) minimizes voltage drop across the protection switch which is critical for accurate state-of-charge measurement. AEC-Q101 qualification supports automotive traction battery and industrial energy storage system deployments.
Recommended
Class-D Audio Amplifier Output Stage
In Class-D audio amplifier output stages, the IPD50N10S3L16ATMA1 is used as the half-bridge switching element driving the LC low-pass filter to the speaker. Its low R_DS(on) of 15 mΩ minimizes conduction loss and thermal dissipation, which directly impacts amplifier efficiency and thermal design. The 100 V V_DS rating allows higher supply rails that increase amplifier dynamic range — useful in automotive and professional audio where 50-80 V rails are common. The fast switching capability of OptiMOS-T3 supports the 250-500 kHz switching frequencies typical in high-fidelity Class-D designs.
Recommended
Solenoid and Relay Driver
Industrial solenoid drivers and high-current relay replacements use the IPD50N10S3L16ATMA1 as a solid-state switch replacing mechanical relays. With 50 A continuous current capability and 100 V V_DS, the MOSFET handles inductive kickback transients via avalanche energy absorption while the body diode (or external freewheeling diode) handles reverse current during de-energization. The DPAK outline supports PCB-level integration into industrial control cabinets. Compared to mechanical relays, the MOSFET provides silent operation, longer lifetime (no contact wear), and faster switching.
Recommended
Power ORing and Hot-Swap Controller
Power ORing in redundant 48 V telecom and server supplies uses the IPD50N10S3L16ATMA1 as the ORing FET to prevent reverse-current flow when supplies are paralleled. With 100 V V_DS and 15 mΩ R_DS(on), two MOSFETs per rail minimize power dissipation at 30-50 A continuous currents. In hot-swap controllers, the MOSFET's gradual turn-on via gate-resistor-controlled dV/dt protects downstream capacitors from inrush surge. AEC-Q101 grade supports telecom and industrial server environments.
Recommended
Recommended Products Summary
Engineering reference data for IPD50N10S3L16ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB50N10S3L16ATMA1 | IPI50N10S3L16ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO263-3 (D2PAK) | PG-TO262-3 (I2PAK) | PG-TO252-3-11 (DPAK) |
| Brand | Infineon | Infineon | Infineon | Infineon |
| V_DS max | 100 V | 100 V | 100 V | 60 V |
| Continuous I_D (T_C=25C) | 50 A | 50 A | 50 A | 50 A |
| R_DS(on) max @ V_GS=10V | 15 mΩ | 20 mΩ | 15 mΩ | 40 mΩ |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Series | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS 2 |
| Mounting Style | Surface Mount (DPAK) | Surface Mount (D2PAK) | Through-Hole (I2PAK) | Surface Mount (DPAK) |
Key Differentiators
- 100V rating in DPAK with 15 mΩ R_DS(on) (vs IPD50N06S409ATMA2 (60V/40 mΩ))
- AEC-Q101 qualified automotive grade (vs STD40NF10 (STMicroelectronics, industrial grade only))
- OptiMOS-T3 trench technology with low Q_G (vs Older planar 100V MOSFETs)
Design Notes
Estimated: at V_DS=100 V worst-case avalanche events or 50 A continuous conduction with 100 mΩ effective loop, the IPD50N10S3L16ATMA1 dissipates up to 7-10 W per device. The DPAK package has θ_JA of approximately 50 C/W on a standard JEDEC 1 oz copper 1 sq-inch pad — derate to roughly 1.5 W per square inch of copper without external heatsink. For continuous high-current operation solder the drain tab to a 1-2 sq-inch copper pour; for full 50 A continuous operation an external clip-on heatsink or insulated metal substrate (IMS) is recommended. Verify thermal performance in your application with a thermocouple on the tab.
The IPD50N10S3L16ATMA1 is a 100 V/50 A switching device — gate-loop inductance must be minimized to prevent ringing and gate-oxide overstress. Per the manufacturer application notes, place the gate-driver within 25 mm of the gate pin with a gate resistor of 10-47 Ω to control dV/dt. Use a wide and short source-return path and consider a Kelvin-source connection (where the tab source and signal source are routed separately) for high-frequency switching above 100 kHz. The drain tab must be soldered to a continuous copper pour that serves as both electrical node and thermal heatsink; do not daisy-chain the drain through narrow traces.
Three common design pitfalls: (1) Exceeding V_GS=±20 V absolute maximum — use a gate-driver with 12 V gate drive and zener clamps if ringing is suspected. (2) Driving the gate with insufficient gate-drive voltage — at V_GS=4.5 V the R_DS(on) may be 2-3× higher than at 10 V, dramatically increasing conduction loss. (3) Forgetting the body diode reverse-recovery characteristics — in half-bridge configurations the anti-parallel body diode of the synchronous MOSFET must be characterized or replaced with an external Schottky for hard-switched high-frequency designs. Always verify the datasheet's avalanche energy rating E_AS for any inductive-load switching application.
Compliance Information
RoHS compliant per Infineon product page; AEC-Q101 automotive qualified per manufacturer datasheet and Arrow listing. Halogen-free and lead-free per Infineon's product-family compliance program.
