IPD60R2K0PFD7SAUMA1 vs BSC076N04NDATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R2K0PFD7SAUMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R2K0PFD7SAUMA1 - 600V CoolMOS PFD7 N-Channel MOSFET | Infineon
IPD60R2K0PFD7SAUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD60R2K0PFD7SAUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS PFD7 | OptiMOS 3 |
| Technology | Superjunction N-Channel MOSFET | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) at T_C | 3 A | — |
| Power Dissipation (P_D) at T_C | 20 W | — |
| R_DS(on) at V_GS = 10 V | 2000 milliohm (typ) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Paket | PG-TO252-3-344 (DPAK) | — |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | — |
| Tingkat Sensitivitas Kekeringan (MSL) | MSL2 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Standard Pack Quantity | 2500 pcs / 13-inch reel | — |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Paket / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |