IPD65R380E6ATMA1 vs IPD65R225C7ATMA1 Comparison
Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD65R225C7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD65R380E6ATMA1 | IPD65R225C7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | CoolMOS C7 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS™) | Super-junction (SJ) / CoolMOS |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Operating Temperature Range | -55 °C to +150 °C | -55°C to +150°C |
| Package | PG-TO252-3 (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDSS) | — | 650 V |
| Continuous Drain Current (ID) at TC | — | 11 A |
| Power Dissipation (PD) at TC | — | 63 W |
| On-Resistance RDS(on) max | — | 225 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Number of Pins | — | 3 (2 + tab) |
| Avalanche Energy Rated | — | Yes (per datasheet) |