IPD70N10S3L12ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPD70N10S3L12ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPD70N10S3L12ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | β |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 70 A | β |
| Pulsed Drain Current (IDM) | 180 A | β |
| Power Dissipation (Ptot, Tc) | 125 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΞ© | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Gate, Source + tab) | β |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Rating | 100 % avalanche tested | β |
| RoHS Status | Compliant (Green Product) | β |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |