IPD70N10S3L12ATMA1 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von IPD70N10S3L12ATMA1 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD70N10S3L12ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | — |
| Transistortyp | N-Channel MOSFET (Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (Ptot, Tc) | 125 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΩ | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Drain, Gate, Source + tab) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100 % avalanche tested | — |
| RoHS-Status | Compliant (Green Product) | — |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Technology | — | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |