IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon
MPN: IPD70N10S3L12ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.32 | $132.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
| 3,000 | $0.78 | $2,340.00 |
IPD70N10S3L12ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch current at low on-state losses. MOSFETs belong to the broader family of discrete transistors within power semiconductors, sitting at the lowest level of the power-electronics component hierarchy (MOSFET -> discrete transistor -> discrete semiconductor -> power semiconductor). The IPD70N10S3L12ATMA1 uses an N-channel enhancement structure, which requires a positive gate-to-source voltage to turn on the channel and conduct drain current.
Key specifications from the Infineon datasheet include a typical on-state resistance RDS(on) of 11.5 mΩ at VGS = 10 V (per the Infineon product page summary), a maximum pulsed drain current of 180 A for avalanche-rated operation, and 100 % avalanche-tested ruggedness. The device is described as a green product (RoHS compliant) and is qualified for the harshest automotive environments, including 48 V inverter and DC-DC converter applications. Its low switching and conduction losses are tuned for high thermal-efficiency designs.
The OptiMOS-T cell geometry balances low gate charge (Qg) with low RDS(on), enabling high-frequency switching at reduced driver losses. This makes the IPD70N10S3L12ATMA1 especially attractive for synchronous rectification in switched-mode power supplies (SMPS) and for the high-side/low-side switches in bridge topologies. Its 100 V rating provides comfortable headroom for 48 V automotive rails with inductive transient margin.
Typical applications include 48 V automotive inverters, DC-DC converters (buck and boost), motor-drive H-bridges, solenoid drivers, and high-current load switches in industrial automation. The AEC-Q101 qualification makes it drop-in ready for under-hood and chassis electronic control units. The DPAK (PG-TO252-3-11) footprint is the de facto industry standard for through-hole-replacement surface-mount power discretes, so existing DPAK pad layouts can host this part without board rework.
When designing with the IPD70N10S3L12ATMA1, observe the maximum junction temperature of 175 °C and ensure the PCB copper area under the drain tab provides sufficient heatsinking for the application's steady-state dissipation. Use a gate-drive voltage of 10 V for full RDS(on) enhancement and add a gate-source resistor of 10 kΩ or more to prevent floating-gate turn-on during system transients. According to Infineon's OptiMOS-T datasheet, the device is 100 % avalanche tested, so unclamped inductive switching is permitted within the rated single-pulse avalanche energy.
This page consolidates distributor pricing, parametric drop-in alternatives, and PCB design considerations for the IPD70N10S3L12ATMA1, providing practical information beyond the manufacturer's datasheet for procurement and design engineers.
Drop-in alternatives for IPD70N10S3L12ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD70N10S3L12ATMA1 (same form factor and footprint) — differing in Pin Count, MSL Level, Operating Junction Temperature, Package / Case, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD70N10S3-12
✅ Drop-In📋 Reference alternative (not in catalog)
IPD082N10N3GATMA1
✅ Drop-In✓ In Stock
$1.14 / Unit
View Datasheet →IPB35N10S3L26ATMA1
✅ Drop-In✓ In Stock
$1.15 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →STD80N10F7
✅ Drop-In📋 Reference alternative (not in catalog)
NVB6411ANT4G
✅ Drop-In📋 Reference alternative (not in catalog)
IPD70N10S3L12ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A |
| Pulsed Drain Current (IDM) | 180 A |
| Power Dissipation (Ptot, Tc) | 125 W |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΩ |
| Operating Temperature Range | -55 °C to +175 °C (junction) |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Drain, Gate, Source + tab) |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Rating | 100 % avalanche tested |
| RoHS Status | Compliant (Green Product) |
IPD70N10S3L12ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; drive with 10 V for full RDS(on) enhancement |
| Pin 2 | Source (S) — Source connection; tied internally to the heatsink tab for thermal dissipation |
| Pin 3 | Drain (D) — Drain connection (also accessible via the metal tab on DPAK) |
| Pin Tab | Drain (D) / Thermal Pad — Metal tab electrically connected to Drain (PG-TO252-3-11 variant); provides primary thermal dissipation path |
Safe Operating Area (DC) - IPD70N10S3L12ATMA1
Typical Applications
IPD70N10S3L12ATMA1 is suitable for 6 applications: 48V Automotive Inverter, 48V DC-DC Buck/Boost Converter, Automotive Motor Drive H-Bridge, Solenoid and Injector Driver, High-Current Load Switch, Synchronous Rectifier in SMPS.
48V Automotive Inverter
The IPD70N10S3L12ATMA1 fits 48V automotive inverter stages because of its 100 V VDS rating (with 2x headroom over the 48V bus), 70 A continuous drain current, and 11.5 mΩ RDS(on) that limits conduction loss during high-torque motor switching. Its AEC-Q101 qualification and 175 °C junction rating survive under-hood thermal stress. The DPAK package drops onto the industry-standard inverter half-bridge layout, allowing the part to serve as either the high-side or low-side switch in a three-phase bridge. Compared with 60 V alternatives, the 100 V rating absorbs 48V bus inductive transients without avalanche breakdown, while the 180 A pulsed rating handles motor inrush during startup. Per Infineon's OptiMOS-T datasheet, 100 % avalanche testing permits unclamped switching events within rated energy, which simplifies the inverter protection design and reduces snubber component count.
Recommended
48V DC-DC Buck/Boost Converter
In 48V-to-12V or 12V-to-48V bidirectional DC-DC converters, the IPD70N10S3L12ATMA1 serves as the synchronous rectifier or main switch. The 11.5 mΩ RDS(on) reduces conduction loss at 70 A load, while the OptiMOS-T cell geometry balances gate charge for switching frequencies between 50 kHz and 250 kHz. The 100 V rating provides margin for the 48V bus plus transient overshoots during load-dump events. AEC-Q101 qualification is required by most OEMs for any 48V power stage that interfaces with the vehicle's high-voltage network. The DPAK footprint allows the synchronous-rectifier position to use the same PCB layout as 60V prior-generation designs, easing migration. Designers should pay attention to the gate-drive voltage (10 V recommended for full RDS(on) enhancement) and add a 10 kΩ gate-source pull-down to prevent floating-gate turn-on during controller reset.
Recommended
Automotive Motor Drive H-Bridge
The IPD70N10S3L12ATMA1 is well-suited for brushed-DC and BLDC motor H-bridge positions in body-electronics modules (power windows, seat adjusters, electric water pumps). The 70 A continuous rating exceeds typical motor stall currents, while the 180 A pulsed rating handles motor inrush and stall transients. The 100 V VDS rating provides comfortable margin for the 12V/24V automotive bus plus inductive kickback, eliminating the need for bulky TVS clamps across each FET. The DPAK package's exposed drain tab enables direct PCB copper heatsinking, important in space-constrained body controllers. AEC-Q101 qualification, 175 °C junction temperature, and 100 % avalanche testing satisfy the long-term reliability requirements of under-dash and under-hood modules. Pair the FET with a dedicated H-bridge gate driver like the IR2109SPBF or TLE9180D32QKXUMA1 for full motor-drive functionality.
Recommended
Solenoid and Injector Driver
Automotive solenoid drivers, including fuel injectors, transmission shift solenoids, and emission-control actuators, demand high peak currents with fast switching edges. The IPD70N10S3L12ATMA1's 180 A pulsed rating covers the inrush current of typical 12V solenoids, while the 11.5 mΩ RDS(on) keeps steady-state dissipation low during hold-current PWM. The 100 V VDS absorbs the inductive flyback without external clamping components, reducing BOM cost and PCB area. The DPAK package and MSL1 rating support standard SMT assembly lines, including those with 260 °C peak-reflow profiles common in automotive EMS. The AEC-Q101 qualification is required for any component exposed to the under-hood thermal and vibration environment. The part's 100 % avalanche rating allows unclamped inductive switching events within datasheet energy limits.
Recommended
High-Current Load Switch
The IPD70N10S3L12ATMA1 works as a high-side or low-side load switch in industrial automation and automotive power-distribution modules. At 70 A continuous drain current, it can handle heavy resistive loads (heater elements, lighting arrays, contactor coils) without paralleling multiple FETs. The 11.5 mΩ RDS(on) keeps full-load conduction loss around 54 W at 70 A, manageable with a DPAK footprint and PCB copper heatsinking. The 100 V VDS rating is sufficient for 48V industrial bus systems and 24V truck electrical systems. The logic-level-compatible threshold allows direct microcontroller GPIO drive in some applications, though a dedicated gate driver is recommended for fast switching and to overcome the Miller plateau. AEC-Q101 qualification enables the same part to be reused across both industrial and automotive product lines, simplifying inventory.
Recommended
Synchronous Rectifier in SMPS
In switched-mode power supplies (SMPS) above 1 kW output power, the IPD70N10S3L12ATMA1 functions as the synchronous rectifier on the secondary side, replacing Schottky diodes to improve efficiency. The 11.5 mΩ RDS(on) drops conduction loss by ~50 % versus equivalent Schottky diodes at high currents, while the 100 V VDS comfortably exceeds the reflected output voltage plus leakage spike in most telecom and server PSU topologies. The OptiMOS-T technology is optimized for low gate charge (Qg), reducing drive losses at 100 kHz+ switching frequencies common in modern digital-power designs. The DPAK package's thermal pad enables direct PCB heatsinking, critical when the synchronous rectifier sees full load current continuously. For highest efficiency at the cost of slightly higher RDS(on), consider paralleling two FETs; for lowest cost, a single IPD70N10S3L12ATMA1 is typically adequate up to 3 kW.
Recommended
Recommended Products Summary
Engineering reference data for IPD70N10S3L12ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD70N10S3-12 | IPD082N10N3GATMA1 | IPB35N10S3L26ATMA1 | STD80N10F7 | NVB6411ANT4G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | STMicroelectronics (cross-brand) | onsemi (cross-brand) |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V (same) | 100 V (same) | 100 V (same) | 100 V (same) | 100 V (same) |
| Automotive Grade (AEC-Q101) | Yes | No (industrial) | Yes (AEC-Q101) | Yes (AEC-Q101) | No (industrial) | Yes (AEC-Q101) |
| Approx. Unit Price @ qty 1 | USD 1.85 | Lower (industrial variant) | Higher (lower RDS(on)) | Lower (lower current) | Similar | Similar |
Key Differentiators
- Automotive AEC-Q101 grade with 100% avalanche testing (vs IPD70N10S3-12)
- Optimized RDS(on) × Qg figure of merit for 48V automotive inverters (vs IPD082N10N3GATMA1)
- Cross-brand DPAK drop-in with 100V/80A capability (vs STD80N10F7)
Design Notes
Estimated: at ID = 70 A and RDS(on) = 11.5 mΩ, conduction loss is approximately P = I² × RDS(on) = 70² × 0.0115 = 56.4 W. With the PG-TO252-3-11 (DPAK) tab soldered to 1 square inch (≈ 645 mm²) of 2 oz copper on a standard 1.6 mm FR-4 PCB, the junction-to-ambient thermal resistance θJA is approximately 50 °C/W, yielding a 56 °C rise above ambient. To stay below the 175 °C maximum junction at 85 °C ambient, the application dissipation must be limited to (175 − 85) / 50 = 1.8 W continuous, so the 70 A rating is achievable only with substantial airflow, larger copper areas, or a heatsink attached to the tab. Always verify with the manufacturer's SOA curve for the specific pulse profile in your application.
Lay out the DPAK footprint with the drain tab as a large copper pour connected to a topside thermal plane, ideally with thermal vias to internal copper layers for additional heat spreading. Place the gate-drive resistor (typ. 10 Ω) within 5 mm of the gate pin to minimize parasitic inductance, and add a 10 kΩ gate-to-source pull-down resistor directly at the gate pin to prevent floating-gate turn-on during controller reset or supply transients. Keep the high-current drain loop area as small as possible to minimize switching losses and radiated EMI.
Do not exceed VGS = ±20 V (absolute maximum). Driving the gate above 20 V destroys the gate oxide, while undershoot below -20 V has the same effect. Use a gate-drive voltage of 10 V for full RDS(on) enhancement; lower drive voltages result in substantially higher on-state resistance and thermal runaway. Do not operate continuously at the pulsed current rating - the 180 A pulsed rating is for short-duration (typically < 100 µs) transients only. Verify single-pulse avalanche energy (EAS) before using the part in unclamped inductive switching applications; the IPD70N10S3L12ATMA1 is 100 % avalanche tested per Infineon's datasheet but EAS must still be calculated against your specific L × I² value.
For switching applications above 50 kHz, minimize the source-inductance path between the FET source pin and the gate-driver ground return. A Kelvin-source connection (separate source-sense trace to the gate driver) eliminates the source-inductance-induced gate-voltage bounce that otherwise slows switching and causes ringing. Place input bulk capacitance as close as possible to the drain pin in buck topologies to reduce the high-frequency loop area. For half-bridge configurations, ensure symmetric gate-drive paths for both FETs to prevent shoot-through caused by gate-timing skew.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon product page. RoHS compliant (Green Product). MSL1 to 260 °C peak reflow per JEDEC J-STD-020. 100 % avalanche tested per Infineon datasheet. Maximum operating junction temperature 175 °C.
