IPG20N06S2L65ATMA1 vs IPG20N10S4L35ATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S2L65ATMA1 by Infineon and IPG20N10S4L35ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N06S2L65ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | Dual N-Channel, Logic Level | 2 N-Channel (Dual) |
| Technology | OptiMOS-T2 (Planar Trench 55V) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A per channel | — |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| Operating Temperature Range | -55°C to +175°C | — |
| Package | PG-TDSON-8-4 (TDSON-8 EP) | — |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260°C peak reflow) | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Operating Temperature | — | 175°C max junction |
| Package / Case | — | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Series | — | OptiMOS™, Automotive |
| RoHS Status | — | Compliant (Green Product) |
| Avalanche Rated | — | 100% Avalanche Tested |