IPG20N06S2L65ATMA1 vs IPG20N10S4L35ATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N06S2L65ATMA1 dari Infineon dan IPG20N10S4L35ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N06S2L65ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel, Logic Level | 2 N-Channel (Dual) |
| Technology | OptiMOS-T2 (Planar Trench 55V) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A per channel | — |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| Rentang Suhu Kerja | -55°C to +175°C | — |
| Paket | PG-TDSON-8-4 (TDSON-8 EP) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (260°C peak reflow) | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Suhu Kerja | — | 175°C max junction |
| Paket / Case | — | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Series | — | OptiMOS™, Automotive |
| Status RoHS | — | Compliant (Green Product) |
| Avalanche Rated | — | 100% Avalanche Tested |