IPG20N10S4L22AATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L22AATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΞ© MOSFET | Infineon
IPG20N10S4L22AATMA1 β ActiveInfineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N10S4L22AATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $1.78 |
| FET Type | Dual N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | β |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΞ© (typical) | β |
| Power Dissipation (P<sub>D</sub>) | 60 W | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Lead Configuration | Wettable Flank | β |
| Automotive Qualification | AEC-Q101 | β |
| Technology | OptiMOS T2 | OptiMOS 5 (N-channel trench) |
| Operating Temperature | -55Β°C to +175Β°C | β |
| RoHS Status | Compliant | Compliant |
| Channel Count | 2 (dual independent) | β |
| Manufacturer | β | Infineon Technologies |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| Operating Temperature Range | β | -55 C to +150 C |
| MSL Level | β | 1 |
| Avalanche Rated | β | Yes |