IPG20N10S4L22AATMA1 vs BSC019N08NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N10S4L22AATMA1 sa pamamagitan ng Infineon at BSC019N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon
IPG20N10S4L22AATMA1 ✓ NakahandaInfineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPG20N10S4L22AATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | Dual N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | — |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>) | 60 W | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-TDSON-8-10 (Wettable Flank) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Lead Configuration | Wettable Flank | — |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS T2 | OptiMOS 5 (N-channel trench) |
| Temperature na Operasyon | -55°C to +175°C | — |
| Tindminan RoHS | Compliant | Compliant |
| Channel Count | 2 (dual independent) | — |
| Manufacturer | — | Infineon Technologies |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C |
| Level ng MSL | — | 1 |
| Avalanche Rated | — | Yes |