BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
MPN: BSC011N03LSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.85 | $85.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.54 | $540.00 |
Drop-in alternatives for BSC011N03LSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC011N03L5SATMA1
✅ Drop-In✓ In Stock
$0.47 / Unit
View Datasheet →BSC0902NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC020N03LSGATMA1
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →BSC010N04LSATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →NTMFS4C029N
✅ Drop-In📋 Reference alternative (not in catalog)
BSC011N03LSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 30V |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Continuous Drain Current (ID) at TA=25C | 37 A |
| Pulsed Drain Current (IDM) | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) |
| Power Dissipation (PD) at TC=25C | 96 W |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
BSC011N03LSATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input (drive with 10V for full enhancement) |
| Pin 2 | Source — Source connection (electrically tied to pins 3-7 internally) |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (also exposed thermal pad on bottom) |
Safe Operating Area - BSC011N03LSATMA1
Typical Applications
BSC011N03LSATMA1 is suitable for 6 applications: Server and Datacom VRM, 12V Hot-Swap and OR-ing, Synchronous Rectification in Telecom Bricks, Power Tool Battery Protection, Point-of-Load DC-DC Converters, Automotive 12V Load Switching.
Server and Datacom VRM
The BSC011N03LSATMA1 is well-suited for synchronous buck stages in 12V-input server and datacom voltage regulator modules. Its 1.1 mOhm RDS(on) at VGS=10V minimizes conduction loss on the low-side switch in continuous-conduction mode, while the 30V VDS rating provides ample margin above 12V nominal plus inductive transients. Placed as the low-side FET in a multi-phase buck with 10V gate drive, this part enables >95% peak efficiency at 25-50A per phase. The exposed pad connects to a 1+ cm2 copper pour on the top layer to keep junction temperature below 100C at full load. The compact PG-TDSON-8-1 footprint matches standard PowerPAK SO-8 land patterns, simplifying multi-vendor sourcing.
Recommended
12V Hot-Swap and OR-ing
In 12V hot-swap and OR-ing applications the BSC011N03LSATMA1 acts as the switching element that protects upstream supplies from inrush current when a hot-pluggable card is inserted. Its 100A pulsed drain current rating handles the brief inrush surge, while the 1.1 mOhm RDS(on) minimizes steady-state voltage drop in the OR-ing path. Designers typically place this MOSFET in the high-side or low-side path with a hot-swap controller such as the LTC4215 or TPS2490 monitoring VDS. The 30V VDS rating tolerates inductive kick from the load, and the SO-8 footprint enables compact layouts in blade servers and telecom line cards where PCB area is at a premium.
Recommended
Synchronous Rectification in Telecom Bricks
The BSC011N03LSATMA1 serves as the synchronous rectifier FET in 12V-output isolated telecom DC-DC bricks (typically full-bridge or forward topologies). Its low RDS(on) and ultra-low gate charge reduce both conduction and switching loss, directly improving overall converter efficiency by 1-2% over discrete Schottky solutions. The 30V VDS rating accommodates the secondary-side ringing that occurs at primary switching transitions. Driven by a gate transformer or synchronous rectifier controller such as the UCC24612, this part delivers reliable operation at switching frequencies up to 200 kHz. The exposed pad soldered to a thermal via array keeps junction temperature within safe limits at full output current.
Recommended
Power Tool Battery Protection
In cordless power tool battery management systems (12V-18V Li-ion packs), the BSC011N03LSATMA1 functions as the high-side disconnect switch and short-circuit protection element. Its 100A pulsed current rating handles motor stall transients, and the 30V VDS rating is well above the maximum 5-cell Li-ion pack voltage of 21V. The 1.1 mOhm RDS(on) reduces I2R loss during high-current discharge, extending runtime per charge. Integrated into a battery management IC (BMIC) controlled circuit, this part enables fast turn-off in fault conditions via the gate driver. The compact TDSON-8 footprint is critical in space-constrained battery packs where PCB area is at an absolute premium.
Recommended
Point-of-Load DC-DC Converters
The BSC011N03LSATMA1 is deployed as the control FET or synchronous FET in non-isolated point-of-load (POL) converters such as 12V-to-1.8V or 12V-to-3.3V buck regulators for ASICs and FPGAs. Its 30V VDS comfortably handles 12V input transients up to 15V, and the low RDS(on) improves light-load and full-load efficiency alike. At switching frequencies of 300-600 kHz, the low gate charge of the OptiMOS family enables smaller inductors and capacitors, reducing overall BOM size. The exposed pad PG-TDSON-8-1 package handles the 96W power dissipation rating when mounted on a 4-layer PCB with adequate thermal vias, making this part ideal for high-density POL designs.
Recommended
Automotive 12V Load Switching
Although not AEC-Q101 qualified, the BSC011N03LSATMA1 is used in non-safety automotive 12V load-switching applications such as interior lighting drivers, infotainment power rails, and body control modules. Its 100A pulsed drain current handles inductive loads like solenoids and motors, while the 30V VDS rating tolerates load-dump transients up to 35V with proper TVS clamping. The compact TDSON-8 footprint and -55C to +150C operating junction temperature range make it suitable for under-hood and cabin environments. Designers should review Infineon's automotive-grade equivalents (e.g., IAUC100N04S6L020ATMA1) for safety-critical applications.
Recommended
Recommended Products Summary
Engineering reference data for BSC011N03LSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC011N03L5SATMA1 | BSC0902NSATMA1 | BSC020N03LSGATMA1 | BSC010N04LSATMA1 | NTMFS4C029N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (SuperSO8) | PowerPAK SO-8 (SO-8FL) |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 40 V | 30 V |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm | 1.2 mOhm (typ) | 0.9 mOhm (typ) | 2.0 mOhm | 1.0 mOhm (40V) | 1.3 mOhm |
| Continuous Drain Current (TC=25C) | 100 A | 100 A | 100 A | 100 A | 100 A (40V derated) | 90 A |
| Gate Threshold Voltage (VGS(th)) | 1.6 V typ | 1.6 V typ | 1.6 V typ | 1.6 V typ | 1.6 V typ | 1.7 V typ |
| Power Dissipation (TC=25C) | 96 W | 96 W | 96 W | 96 W | 96 W | 92 W |
| Operating Temperature Range | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
| Approx. Unit Price at 1k qty (USD, as of 2026-09-14) | $0.54 | $0.55 | $0.58 | $0.42 | $0.62 | $0.48 |
Key Differentiators
- Lowest RDS(on) in TDSON-8 footprint for 30V class (vs BSC020N03LSGATMA1)
- Higher VDS rating provides design margin (vs BSC010N04LSATMA1)
- Lower RDS(on) than cross-brand SO-8 competitor (vs NTMFS4C029N (onsemi))
- Compact TDSON-8 footprint saves PCB area vs DPAK (vs TO-252 (DPAK) alternatives)
Design Notes
Estimated: at continuous ID=50A in TC=25C free air, the BSC011N03LSATMA1 dissipates P = I^2 * RDS(on) = 50^2 * 0.0011 = 2.75W. With PG-TDSON-8-1 thermal resistance of approximately 40 C/W junction-to-case, junction temperature rises 110C above case. Mount the exposed pad to a minimum 1 cm2 copper pour on a 4-layer PCB with thermal vias to keep junction temperature below 125C at full continuous load. For pulsed operation above 100A, de-rate using the SOA curve on the datasheet.
The PG-TDSON-8-1 package requires careful PCB layout to maximize thermal and electrical performance. Use a land pattern matching the PowerPAK SO-8 footprint with the exposed pad connected to a thermal via array (typically 4-9 vias of 0.3mm diameter). Place input/output capacitors within 2mm of the source and drain pads to minimize parasitic inductance. The gate trace should be wide (at least 0.5mm) and routed away from the drain switching node to avoid capacitive coupling that could cause Miller-induced turn-on.
Do not operate the BSC011N03LSATMA1 below VGS(th) of 1.0V - the device will be in linear region and dissipate excessive power. Always use a 10V gate drive for full enhancement to achieve the 1.1 mOhm RDS(on) specification; at 4.5V VGS, RDS(on) increases 2-3x. Also note that VGS must not exceed +/-20V absolute maximum - use a gate-source Zener clamp (15V) in inductive switching applications to prevent gate oxide failure from ringing.
Minimize the source-inductance loop between the source pins (2-7) and the gate driver ground return. Use a Kelvin connection by routing the gate driver ground directly to the source pad, not to the system ground plane, to avoid gate-drive degradation during high di/dt switching transitions. Place a 100nF ceramic bypass capacitor close to the gate driver supply pin to suppress noise that could cause false triggering.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100/AEC-Q101 qualified - choose Infineon automotive-grade equivalents such as IAUC100N04S6L020ATMA1 for AEC-Q100 designs.
