IPL60R065P7AUMA1 vs IAUC100N04S6N028ATMA1 Comparison
Detailed side-by-side comparison of IPL60R065P7AUMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R065P7AUMA1
IPL60R065P7AUMA1 - 600V 65mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R065P7AUMA1 β ActiveInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R065P7AUMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOSβ’ P7 (superjunction) | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 41 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΞ© (max) | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 201 W | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | β |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | β |
| Rise Time (t<sub>r</sub>) | 7 ns | β |
| Fall Time (t<sub>f</sub>) | 4 ns | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T<sub>j</sub>) | -55 Β°C to +175 Β°C |
| Package | PG-VSON-4 (surface mount with exposed pad) | PG-TDSON-8 (TDSON-8) |
| Number of Pins | 4 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| Polarity | Single N-channel | β |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | β |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 Β°C) | 0.053 Ξ© | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Halogen-Free | Yes | β |
| Series | β | OptiMOS 6 40V |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 100 A |
| Pulsed Drain Current (I_DM) | β | 400 A |
| R_DS(on) max @ V_GS=10V | β | 2.8 mΞ© (typical) |
| Gate Threshold Voltage (V_GS(th)) | β | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 62 W |
| Automotive Qualified | β | Yes |