IPL60R105P7AUMA1 vs IPL65R200CFD7AUMA1 Comparison

Detailed side-by-side comparison of IPL60R105P7AUMA1 by Infineon and IPL65R200CFD7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R200CFD7AUMA1 IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 ✓ Active

Specification Comparison

Parameter IPL60R105P7AUMA1 IPL65R200CFD7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.52
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS CFD7
Technology Superjunction (SJ) N-Channel Power MOSFET CoolMOS Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V 650 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Operating Temperature Range -55C to +150C —
Package PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel —
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Halogen Free Yes —
Lead-Free Yes —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 14 A
Power Dissipation (PD, Tc) — 81 W
On-Resistance (RDS(on)) — 0.2 ohm at VGS=10V, ID=5.2A
Gate Threshold Voltage (VGS(th)) — 3.5 V
Operating Temperature — -55C to +150C (TJ)
Gate Charge (Qg) — [DATA_NEEDED: typical Qg value]
Body Diode — Fast-recovery intrinsic
Gate-Source ESD Protection — Yes (integrated)

Datasheets & Resources

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