Infineon

IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon

MPN: IPL60R105P7AUMA1 ✓ Active
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600 V Vdss 33 A Id 105 mΩ Rds(on) PG-VSON-4 (4-pin SMD with exposed pad) Package
From $0.82 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.38 $138.00
500 $1.15 $575.00
1,000 $0.96 $960.00
2,500 $0.82 $2,050.00
ℹ️ All prices are in USD

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IPL60R105P7AUMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series CoolMOS P7
Technology Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V
On-Resistance (RDS(on)) max 105 mΩ
Continuous Drain Current (ID) at Tc 33 A
Power Dissipation (Ptot) at Tc 137 W
Gate Threshold Voltage (VGS(th)) typ 3.5 V
Gate Charge (Qg) typ 45 nC
Operating Temperature Range -55C to +150C
Package PG-VSON-4 (4-pin SMD with exposed pad)
Mounting Type Surface Mount
Channel Type N-Channel
RoHS Status Compliant
Halogen-Free Yes
Lead-Free Yes

IPL60R105P7AUMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 S — Source (pin 1)
Pin 2 S — Source (pin 2)
Pin 3 S — Source (pin 3)
Pin 4 G — Gate
Pin EP D — Drain (exposed pad on underside - primary thermal and electrical connection)

Safe Operating Area (DC, Tj=25C)

DC Continuous Operation

Typical Applications

IPL60R105P7AUMA1 is suitable for 7 applications: Power-Factor-Correction (PFC) Boost Stage, LLC Half-Bridge Primary Switch, Solar Microinverter / String Inverter, Industrial Auxiliary Power Supply, LED Driver Power Stage, Server / Telecom SMPS, Electronic Ballast for HID / Fluorescent Lighting.

Power-Factor-Correction (PFC) Boost Stage

The IPL60R105P7AUMA1 is well suited to continuous-conduction-mode (CCM) PFC boost stages in 500 W to 1.5 kW offline SMPS designs. The 600 V VDS rating provides comfortable headroom above the rectified 230 VAC peak of approximately 373 V, with margin for voltage transients. The 105 mΩ RDS(on) keeps conduction losses manageable at full load, while the 45 nC typical gate charge keeps driving losses low at 65-100 kHz switching frequencies typical of modern PFC. The PG-VSON-4 footprint enables slim-line designs where TO-220 packages would not fit. Place the part on the input rectifier side, with adequate copper pour and thermal vias under the exposed drain pad.

💡

LLC Half-Bridge Primary Switch

In LLC resonant half-bridge converters for LED drivers, adapters, and server PSU auxiliary rails, the IPL60R105P7AUMA1 serves as the primary-side high-side or low-side switch. Its superjunction architecture delivers low RDS(on) × Qg figure of merit, which directly reduces turn-off losses during resonant commutation. The CoolMOS P7 platform also offers excellent body-diode ruggedness, important when the LLC operates near the resonant point and the body diode may conduct briefly. Designers should verify that the resonant tank inductance and dead-time are tuned to keep ZVS loss low, and that the gate driver can source/sink the 45 nC gate charge quickly enough for the target switching frequency.

✈️

Solar Microinverter / String Inverter

Single-phase solar inverters in the 1-3 kW range commonly use a two-stage topology with a PFC front end and an LLC or full-bridge DC-DC stage, both of which can use the IPL60R105P7AUMA1. The 600 V VDS rating is sufficient for 400-450 V DC-link rails typical of European single-phase photovoltaic systems. The CoolMOS P7 platform's high avalanche energy rating provides margin against grid-side transients and load steps. The compact PG-VSON-4 footprint is valuable in residential microinverter enclosures where board area is constrained. Place this part on the DC-DC primary side, and combine with a TVS diode and Y-cap for EMI suppression.

🏭

Industrial Auxiliary Power Supply

Industrial PLCs, motor drives, and process-control equipment often need a small auxiliary SMPS isolated from the main 3-phase bus, typically rated 50-200 W. The IPL60R105P7AUMA1 fits this role on the primary side of a flyback or forward converter running from a rectified 24 VDC or 380-400 VDC rail. Its 600 V rating gives headroom against voltage spikes on industrial DC buses, and the CoolMOS P7 platform provides high reliability under harsh electrical environments. Designers should add a snubber network across the transformer primary and clamp the drain voltage within 80 percent of VDS max for reliable avalanche margin.

💡

LED Driver Power Stage

High-brightness LED drivers for architectural, horticultural, and street-lighting applications typically use a PFC + LLC or PFC + flyback topology with output powers of 75-300 W. The IPL60R105P7AUMA1 is appropriate for the PFC stage and primary-side switch in such designs. Its 105 mΩ RDS(on) keeps efficiency above 90 percent at full load, and the small PG-VSON-4 package enables slim IP65-rated outdoor enclosures. The CoolMOS P7 family is qualified for lighting-grade reliability, with predictable body-diode behavior that simplifies LLC tank design. Combine this part with a constant-current secondary-side controller for flicker-free dimming.

🖥️

Server / Telecom SMPS

Hot-swap, 80 PLUS titanium, and CRPS-style server PSU designs use multi-stage converters where the IPL60R105P7AUMA1 can serve in the AC-DC front-end PFC and the LLC primary. The 600 V rating handles the rectified 230 VAC rail comfortably, and the low Qg keeps the PFC efficiency high at 100 kHz+. The PG-VSON-4 footprint also helps meet 1U height constraints typical of CRPS form factors. Designers should verify that the leakage inductance and PCB layout keep switching-node ringing below 80 percent of VDS max, and use a Kelvin-source connection if available on the gate driver to avoid ground bounce.

💡

Electronic Ballast for HID / Fluorescent Lighting

Although LED lighting is increasingly dominant, electronic ballasts for HID and high-power fluorescent lamps still use a PFC + half-bridge topology that can leverage the IPL60R105P7AUMA1 as the high-side and low-side primary switches. The 600 V VDS rating handles the rectified mains comfortably, and the low RDS(on) minimizes thermal stress in enclosed ballast housings. The CoolMOS P7 platform's avalanche ruggedness is valuable here because ballasts must tolerate lamp strike transients. The PG-VSON-4 footprint enables ultra-thin ballast designs that fit inside narrow lamp fixtures.

What is the drain-source breakdown voltage of the IPL60R105P7AUMA1?
The IPL60R105P7AUMA1 has a drain-source breakdown voltage (V(BR)DSS) of 600 V. According to the Infineon CoolMOS P7 datasheet, this voltage class is designed for offline SMPS, PFC stages, and industrial high-voltage converters. Designers should add at least 80-100 V of derating above the rectified mains peak (approximately 373 V for 230 VAC) to ensure reliable avalanche margin.
What is the maximum on-resistance of IPL60R105P7AUMA1?
The IPL60R105P7AUMA1 specifies a maximum drain-source on-resistance (RDS(on)) of 105 mΩ at 25°C with VGS = 10 V. This low RDS(on) is enabled by Infineon's CoolMOS P7 superjunction technology. Lower on-resistance directly reduces conduction losses in continuous-current applications such as PFC boost stages, where it improves overall efficiency by 0.3-0.8 percent at full load.
What package does the IPL60R105P7AUMA1 use?
The IPL60R105P7AUMA1 is housed in a PG-VSON-4 surface-mount package, a 4-pin SMD outline with an exposed thermal pad on the underside that doubles as the drain terminal. The package footprint is significantly smaller than TO-220 or TO-247, enabling compact high-density power designs. The exposed pad must be soldered to a sufficient copper pour to dissipate up to 137 W at Tc.
What is the continuous drain current rating of IPL60R105P7AUMA1?
The IPL60R105P7AUMA1 is rated for 33 A continuous drain current at case temperature Tc, per the Infineon datasheet. In practical SMD designs with only PCB copper for heatsinking, the realistic continuous current will be lower (typically 8-15 A) because the small VSON-4 package has limited thermal mass. Always verify junction temperature with the thermal-resistance curves.
Where can I buy the IPL60R105P7AUMA1 online?
The IPL60R105P7AUMA1 is in stock at major authorized distributors including DigiKey (P/N 7791508), Mouser, Arrow, and Future Electronics. Pricing as of 2026-09-14 starts around USD 1.85 at qty 1 on DigiKey, with volume breaks to USD 0.82 at qty 2500. Lead time for factory reels is typically 6-10 weeks; distributor stock usually ships same-day.
What is the price of IPL60R105P7AUMA1 at qty 1000?
According to distributor listings as of 2026-09-14, the IPL60R105P7AUMA1 unit price at qty 1000 is approximately USD 0.96 on DigiKey, with steeper volume breaks to USD 0.82 at qty 2500. Pricing reflects Infineon's positioning of the P7 family as a cost-optimized 600 V superjunction MOSFET. Real-time stock and break pricing should be confirmed on DigiKey or Mouser before quoting production BOMs.
What is the lead time for IPL60R105P7AUMA1?
Factory lead time for the IPL60R105P7AUMA1 is typically 6-10 weeks when ordered directly from Infineon. Authorized distributor stock (DigiKey, Mouser, Arrow) usually ships within 1-2 business days for reel quantities, with occasional backorder gaps during demand spikes. As of 2026-09-14, distributor inventory is healthy; we recommend confirming via Octopart for cross-channel availability.
IPL60R105P7AUMA1 vs IPL60R065P7AUMA1 - which should I choose?
The IPL60R105P7AUMA1 has 105 mΩ RDS(on) at 33 A, while the IPL60R065P7AUMA1 (also in the Infineon P7 family) has 65 mΩ at a higher current rating. Choose IPL60R105P7AUMA1 when conduction loss is acceptable at your design's current level and you want lower cost; choose IPL60R065P7AUMA1 when you need lower conduction loss in high-current stages such as 1-3 kW PFC. Both share the same CoolMOS P7 platform benefits.
What is the best drop-in replacement for IPL60R105P7AUMA1?
Direct drop-in replacements in the PG-VSON-4 footprint are limited because few manufacturers offer the exact same 600 V/105 mΩ rating in this SMD outline. Same-brand alternatives include other Infineon P7-family parts with different RDS(on) ratings. For cross-brand equivalents, confirm package compatibility before substituting; the VBQE165R20S is referenced in industry guides as a similar high-voltage alternative but requires footprint verification.
Is there an STMicroelectronics equivalent for IPL60R105P7AUMA1?
STMicroelectronics does not currently offer a drop-in PG-VSON-4 600 V/105 mΩ part that is pin-to-pin compatible with the IPL60R105P7AUMA1. ST's MDmesh K5/K6 families cover the 600 V/100 mΩ class but in TO-220, TO-247, or I2PAK packages, which are different footprints. Engineers needing a true drop-in should stay within the Infineon CoolMOS P7 family.
Is IPL60R105P7AUMA1 suitable for PFC boost stages?
Yes, the IPL60R105P7AUMA1 is well-suited for continuous-conduction-mode (CCM) PFC boost stages in 500 W to 1.5 kW SMPS designs. Its 105 mΩ RDS(on) keeps conduction losses manageable, and the low Qg (45 nC typical) keeps driving losses low. The CoolMOS P7 platform also provides excellent body-diode ruggedness for hard-switched boost operation, which is critical for PFC reliability.
When should I choose IPL60R105P7AUMA1 over a TO-220 MOSFET?
Choose the IPL60R105P7AUMA1 in PG-VSON-4 when PCB height and footprint area are critical - for example, in slim LED drivers, ultra-thin adapter designs, or planar-density power converters. Choose a TO-220 or TO-247 MOSFET (such as the IPP60R180P7XKSA1 in Infineon's lineup) when you need higher continuous current and can afford the larger footprint and through-hole assembly.
What is the gate charge of IPL60R105P7AUMA1?
The IPL60R105P7AUMA1 has a typical total gate charge (Qg) of 45 nC as referenced in distributor specifications and Infineon's CoolMOS P7 datasheet. Lower gate charge directly reduces driving losses in high-frequency converters and allows smaller gate-drive transformers or simpler MOSFET drivers. Combined with the 105 mΩ RDS(on), this gives a competitive FOM (figure of merit = RDS(on) × Qg) for the 600 V class.
Where can I download the IPL60R105P7AUMA1 datasheet PDF?
The official IPL60R105P7AUMA1 datasheet PDF is hosted at https://www.infineon.com/assets/row/public/documents/24/49/infineon-ipl60r105p7-ds-en.pdf (Infineon asset server). The datasheet includes maximum ratings, safe-operating-area curves, body-diode characteristics, thermal-resistance data, and recommended PCB footprint for the PG-VSON-4 package. You can also access it from the Infineon product page at https://www.infineon.com/part/IPL60R105P7.
Where can I find the IPL60R105P7AUMA1 pinout?
The IPL60R105P7AUMA1 uses a 4-pin PG-VSON-4 package: pins 1, 2, and 3 are source (S), pin 4 is gate (G), and the large exposed pad on the underside is drain (D). The pinout is documented in the Infineon datasheet and visualized on the Infineon product page at https://www.infineon.com/part/IPL60R105P7. Be sure to follow the recommended land pattern, as the exposed drain pad dominates thermal and electrical performance.

Engineering reference data for IPL60R105P7AUMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPL60R105P7AUMA1 when you need a 600 V superjunction MOSFET in a compact surface-mount package for PFC, LLC, or flyback stages in the 500 W to 1.5 kW range. It is the right part when board height is constrained (1U servers, slim LED drivers) and you can dedicate adequate copper area under the exposed pad for thermal management. If your design needs lower RDS(on) for higher continuous current (above ~15 A at room temperature with PCB-only cooling), step down to the IPL60R065P7AUMA1 in the same package. If you need a through-hole part with higher continuous current and easier heatsinking, choose the IPP60R180P7XKSA1 instead. For higher VDS headroom in 700-800 V applications, the IPD80R600P7ATMA1 is the same P7 platform in a higher voltage class. Stay within the Infineon P7 family for guaranteed pin compatibility and ease of cross-referencing during sourcing.

Comparison with Alternatives

Parameter This Product IPL60R065P7AUMA1 IPL65R230C7AUMA1 IPD80R600P7ATMA1 IPP60R180P7XKSA1 IPN70R360P7SATMA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-VSON-4 PG-VSON-4 PG-VSON-4 PG-VSON-4 equivalent SMD PG-VSON-4 (different thermal outline) PG-VSON-4 equivalent SMD
Drain-Source Voltage (VDS) 600 V 600 V 650 V 800 V 600 V 700 V
On-Resistance (RDS(on)) max 105 mΩ 65 mΩ 230 mΩ 600 mΩ 180 mΩ 360 mΩ
Continuous Drain Current (ID) 33 A Higher than 33 A Lower than 33 A Lower than 33 A Lower than 33 A Lower than 33 A
Technology Platform CoolMOS P7 (SJ) CoolMOS P7 (SJ) CoolMOS C7 (SJ) CoolMOS P7 (SJ) CoolMOS P7 (SJ) CoolMOS P7 (SJ)
Power Dissipation (Ptot) 137 W Higher than 137 W Lower than 137 W Lower than 137 W Similar to 137 W Lower than 137 W
Mounting Type Surface Mount (PG-VSON-4) Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Approx. Unit Price (USD, qty 1000, as of 2026-09-14) 0.96 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • CoolMOS P7 platform with low Qg × RDS(on) figure of merit (vs IPL65R230C7AUMA1)
  • Compact PG-VSON-4 footprint for slim-line designs (vs IPP60R180P7XKSA1)
  • Wide gate-drive window and high avalanche ruggedness (vs IPD80R600P7ATMA1)

Design Notes

The PG-VSON-4 package dissipates up to 137 W at Tc but only with adequate PCB copper and thermal vias. Estimated: with a 1 oz copper pour of at least 200 mm² on the drain pad and 9-12 thermal vias (0.3 mm diameter) under the exposed pad, the realistic thermal resistance to ambient (θJA) drops to around 35-45 C/W. Without sufficient copper, junction temperature can exceed 150°C at moderate continuous currents, causing thermal shutdown or accelerated aging. Always measure junction temperature in the prototype, not the case.

Use a Kelvin-source connection if the gate driver allows it: route the gate drive return directly to the source pad rather than sharing the high-current source path. This eliminates the source-inductance voltage spike that would otherwise appear at the gate, preventing false turn-on and reducing turn-off switching loss. Also keep the gate loop area small (under 0.5 cm²) to minimize parasitic inductance. The drain pad copper pour should extend at least 5 mm beyond the package edges on all sides, with thermal vias on a 1.0-1.2 mm pitch.

Do not exceed 600 V VDS under any condition including avalanche events - design for at least 80 percent derating at the maximum rectified mains peak (373 V for 230 VAC). Watch the body-diode reverse recovery: although CoolMOS P7 has improved body-diode behavior, hard-switched bridge topologies still require sufficient dead time (typically 100-300 ns) to avoid shoot-through. Finally, ESD protection on the gate is built-in, but handle the part at a grounded workstation and verify VGS stays within ±20 V during handling.

Place the IPL60R105P7AUMA1 as close as practical to the transformer or PFC inductor to minimize the high-current switching loop area. Keep input capacitor return paths short and direct, and avoid routing sensitive analog signal traces (current sense, optocoupler feedback) under the switching node. Use a ground plane on the bottom layer stitched with vias around the switching area to provide a low-impedance return path. If the design uses both high-side and low-side switches, mirror the layout for symmetry so the driver sees balanced parasitic capacitances.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free. Not AEC-Q100 qualified (industrial/consumer grade); AEC-Q100 automotive-grade variants are typically labeled with -Q1 suffix in the Infineon portfolio.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPL60R105P7AUMA1 IPL60R065P7AUMA1 IPL65R230C7AUMA1 IPD80R600P7ATMA1 IPP60R180P7XKSA1 IPN70R360P7SATMA1 CoolMOS P7 superjunction MOSFET power MOSFET N-channel MOSFET PG-VSON-4 VSON Q-DPAK Thin-PAK SMD RoHS REACH AEC-Q100 PFC boost stage LLC half-bridge flyback converter solar inverter LED driver server SMPS industrial auxiliary power supply avalanche ruggedness body diode RDS(on) gate charge
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