IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon
MPN: IPL65R200CFD7AUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.92 | $192.00 |
| 500 | $1.71 | $855.00 |
| 1,000 | $1.52 | $1,520.00 |
IPL65R200CFD7AUMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-source voltage is applied. CoolMOS superjunction MOSFETs represent a specific class within the broader power MOSFET family, using vertical charge-balance structures to achieve lower on-resistance per unit area than conventional planar MOSFETs. The CFD7 (Fast-body-Diode, 7th generation) variant is further optimized for soft-switching and full-bridge/half-bridge topologies that see body-diode conduction.
Key features include integrated gate-source ESD protection, low gate charge (Qg) for reduced driving losses, a 650V repetitive drain-source rating with high avalanche ruggedness, and a Kelvin-source pin configuration in PG-VSON-4 that minimizes source inductance. Compared with planar 600V MOSFETs of similar RDS(on), the CFD7 cuts switching losses by roughly 30-50%, enabling higher frequency operation in LLC, PFC, and phase-shifted full-bridge designs.
The architecture combines a vertical superjunction drift region with a fast-recovery intrinsic body diode, allowing dead-time intervals as short as 100 ns without diode-recovery-induced dv/dt transients. The PG-VSON-4 package provides an exposed drain pad for direct PCB heatsinking and source-sense Kelvin lead that decouples gate-drive current from the power current path.
Typical applications include telecom and server SMPS, solar inverters, EV on-board chargers and DC-DC stages, industrial motor drives, and HID/LED lighting PFC stages. The 650V rating also provides ample margin for 400V rectified-bus operation in three-phase industrial systems.
When designing with this part, prioritize Kelvin-source PCB layout by tying the source-sense pin directly to the gate-driver ground return; the Kelvin connection must bypass the high-current source bondwire inductance. Also consider gate-drive voltage: 10V VGS is recommended for full RDS(on) rating, while 12V provides additional margin.
This page synthesizes distributor pricing, drop-in CoolMOS CFD7 alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPL65R200CFD7AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPL65R200CFD7AUMA1 (same form factor and footprint) — differing in Package, Technology, Series, Operating Temperature Range, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPL60R105P7AUMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPB60R040CFD7ATMA1
✅ Drop-In✓ In Stock
$5.19 / Unit
View Datasheet →IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IPW60R037P7XKSA1
✅ Drop-In✓ In Stock
$3.55 / Unit
View Datasheet →IPL65R200CFD7AUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS CFD7 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 14 A |
| Power Dissipation (PD, Tc) | 81 W |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A |
| Gate Threshold Voltage (VGS(th)) | 3.5 V |
| Technology | CoolMOS Superjunction (SJ) |
| Package | PG-VSON-4 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) |
| Body Diode | Fast-recovery intrinsic |
| Gate-Source ESD Protection | Yes (integrated) |
| RoHS Status | Compliant |
IPL65R200CFD7AUMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Drain — MOSFET drain and thermal pad |
| Pin 3 | Source — MOSFET power source terminal |
| Pin 4 | Kelvin Source — Source-sense return for gate driver (Kelvin connection) |
Safe Operating Area (DC)
Typical Applications
IPL65R200CFD7AUMA1 is suitable for 7 applications: Telecom and Server SMPS Power Factor Correction, LLC Resonant Converter Primary-Side Switching, Solar Inverter DC-AC and DC-DC Stages, EV On-Board Charger PFC and DC-DC Stages, Industrial Motor Drive Inverter Stage, LED and HID Lighting PFC Front-End, Phase-Shifted Full-Bridge Telecom Rectifiers.
Telecom and Server SMPS Power Factor Correction
The IPL65R200CFD7AUMA1 fits telecom SMPS PFC stages because its 650V VDS rating provides safe margin for 400V rectified-bus operation, while the 0.2 ohm RDS(on) at VGS=10V keeps conduction losses manageable at the 14A continuous drain rating. In a 3 kW CCM PFC stage running at 65 kHz, the device dissipates roughly 8-10W under full load, allowing operation without an external heatsink beyond PCB copper. The fast-recovery intrinsic body diode also handles dead-time intervals typical of bridgeless PFC and totem-pole topologies without diode-recovery-induced dv/dt spikes.
Recommended
LLC Resonant Converter Primary-Side Switching
LLC resonant converter primary-side switches benefit from the IPL65R200CFD7AUMA1's fast-recovery body diode and low RDS(on). At 100-200 kHz operating frequencies typical of high-density telecom DC-DC bricks, switching loss dominates conduction loss, and the CFD7 family is designed for exactly this regime. The 0.2 ohm typical RDS(on) at VGS=10V means primary-side conduction losses stay below 5W at 5A RMS, while the integrated gate-source ESD protection reduces external TVS count.
Recommended
Solar Inverter DC-AC and DC-DC Stages
Solar string inverters operating at 600-700V DC bus rails can use the IPL65R200CFD7AUMA1 in the boost and full-bridge stages. The 650V VDS rating tolerates bus overshoot during grid transients, while the 14A continuous rating covers 5 kW single-string designs. The PG-VSON-4 surface-mount package enables compact inverter power-density targets (3-5 kW/L), and the Kelvin-source pin reduces gate-drive oscillation that otherwise degrades efficiency at high dV/dt.
Recommended
EV On-Board Charger PFC and DC-DC Stages
The IPL65R200CFD7AUMA1 is appropriate for 3.3-6.6 kW EV on-board charger PFC and isolated DC-DC stages where 650V breakdown and 14A continuous current meet 400V bus requirements. CoolMOS CFD7 switching-loss reduction (30-50% vs planar) directly improves charger efficiency and thermal headroom, critical for sealed automotive enclosures. The integrated ESD protection also simplifies qualification against ISO 7637-2 transient tests common in automotive environments.
Recommended
Industrial Motor Drive Inverter Stage
Industrial 3-phase motor drives running from 480V AC rectified buses (650-700V DC) can use the IPL65R200CFD7AUMA1 in the inverter leg. The 650V rating tolerates DC-bus overshoot during regenerative braking events, while the 14A continuous rating covers drives up to 3-5 kW per phase. The fast body diode is critical for synchronous-rectification modes and short dead-time (200-400 ns) operation that minimizes motor current distortion.
Recommended
LED and HID Lighting PFC Front-End
Commercial LED drivers and HID ballasts operating at 100-300W use the IPL65R200CFD7AUMA1 in the boost PFC front-end. The 650V rating handles universal-input (90-277V AC) rectified buses with substantial margin, and the 14A continuous rating supports 200-300W designs without paralleling MOSFETs. CoolMOS CFD7 switching performance at 50-100 kHz enables single-stage PFC topologies that meet ENERGY STAR and DLC efficiency requirements above 90%.
Recommended
Phase-Shifted Full-Bridge Telecom Rectifiers
Phase-shifted full-bridge (PSFB) topologies used in high-power 48V telecom rectifiers (3-6 kW) benefit from the IPL65R200CFD7AUMA1's low RDS(on) and fast body diode. The CFD7 family is specifically engineered for ZVS and ZCS conditions, where the intrinsic body diode must conduct briefly during dead-time without inducing reverse-recovery losses. At 100-150 kHz primary-side switching, the 0.2 ohm RDS(on) plus reduced Qrr translate to 1-2% efficiency gain over previous-generation planar MOSFETs.
Recommended
Recommended Products Summary
Engineering reference data for IPL65R200CFD7AUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPL60R105P7AUMA1 | IPB60R040CFD7ATMA1 | IPD65R380E6ATMA1 | IPW60R037P7XKSA1 |
|---|---|---|---|---|---|
| Package | PG-VSON-4 | PG-VSON-4 - same | PG-TDSON-8 | PG-TO252-3 (DPAK) | PG-TO247-3 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 650 V | 600 V | 600 V | 650 V | 600 V |
| On-Resistance (RDS(on) at VGS=10V) | 0.2 ohm | 0.105 ohm | 0.040 ohm | 0.380 ohm | 0.037 ohm |
| Technology / Family | CoolMOS CFD7 (fast body diode) | CoolMOS P7 (standard body diode) | CoolMOS CFD7 (fast body diode) | CoolMOS E6 (older generation) | CoolMOS P7 (standard body diode) |
| Gate-Source ESD Protection | Yes (integrated) | Yes | Yes | Limited | Yes |
Key Differentiators
- Fast intrinsic body diode for ZVS/ZCS topologies (vs IPL60R105P7AUMA1 (CoolMOS P7))
- Compact PG-VSON-4 footprint with Kelvin-source (vs IPD65R380E6ATMA1 (TO-252 DPAK))
- 650V rating with CFD7 family performance (vs IPW60R037P7XKSA1 (CoolMOS P7, TO-247))
Design Notes
Kelvin-source PCB layout is mandatory for PG-VSON-4 to realize the full switching-speed benefit. The source-sense pin (pin 4) must be tied directly to the gate-driver ground return, bypassing the high-current source bondwire inductance. Layout this connection as a 0.5 mm wide trace on an inner PCB layer with a single via to the driver GND, while the power source current flows on a separate path to the low-side shunt or ground plane.
Estimated: at VDS-on of 0.2 ohm and 14A continuous current, worst-case conduction loss is roughly P = I^2 * R = 14^2 * 0.2 = 39.2 W. With PG-VSON-4 thermal resistance of approximately 60 C/W on a 1 oz copper 1 square-inch pad, junction temperature rises ~78 C above ambient at full load. Use a 2 square-inch copper pour or attach a small clip-on heatsink for designs operating above 10A continuous or in sealed enclosures.
Do not exceed the 650V repetitive VDS rating, even briefly - the avalanche energy (EAS) is typically rated only for single-pulse unclamped events. For PFC and LLC designs, verify worst-case bus voltage overshoot during AC-line surge (IEC 61000-4-5) stays below 580V to leave margin. Also avoid operating below VGS(th) of 3.5V - gate-drive undervoltage causes partial enhancement, dramatically increasing RDS(on) and risking thermal runaway.
CoolMOS CFD7's fast switching edges (dv/dt up to 50 V/ns) require snubber capacitors across the drain-source nodes in hard-switched PFC topologies. A 100-470 pF X7R ceramic placed within 5 mm of the MOSFET pins reduces ringing amplitude by 30-50% and dampens common-mode EMI peaks at 30-100 MHz. For LLC topologies where the device sees ZVS, this snubber is typically unnecessary.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications consult Infineon automotive-grade CoolMOS variants. Halogen-free per JEDEC JS709 definition.
