IPL60R115CFD7AUMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPL60R115CFD7AUMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R115CFD7AUMA1
IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon
IPL60R115CFD7AUMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R115CFD7AUMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | β |
| Series | CoolMOS CFD7 | CoolMOSβ’ E6 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc) | 22 A | β |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | β |
| Package / Case | PG-VSON-4 (5x6 mm) with exposed pad | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | Superjunction (CoolMOSβ’) |
| Integrated Body Diode | Yes - fast body diode (CFD) | β |
| Application | Resonant high-power topologies (LLC, PFC) | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 Β°C to +150 Β°C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| Pin Count | 4 | β |
| Quantity per Reel | [DATA_NEEDED: reel qty] | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| Package | β | PG-TO252-3 (DPAK), surface mount |
| MSL Level | β | 1 |