IPL60R115CFD7AUMA1 vs IPD65R380E6ATMA1 Perbandingan
Perbandingan bersamaan detil IPL60R115CFD7AUMA1 dari Infineon dan IPD65R380E6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPL60R115CFD7AUMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | CoolMOS™ E6 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| Paket / Case | PG-VSON-4 (5x6 mm) with exposed pad | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | Superjunction (CoolMOS™) |
| Integrated Body Diode | Yes - fast body diode (CFD) | — |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Status RoHS | Compliant (per distributor listings) | Compliant |
| Jumlah Pin | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Paket | — | PG-TO252-3 (DPAK), surface mount |
| Level MSL | — | 1 |