IPL60R180P6AUMA1 vs IPL60R210P6AUMA1 Comparison

Detailed side-by-side comparison of IPL60R180P6AUMA1 by Infineon and IPL60R210P6AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPL60R180P6AUMA1 IPL60R210P6AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.92 $0.78
Technology CoolMOS P6 (Superjunction N-channel MOSFET) MOSFET (Superjunction / CoolMOS™)
Drain-Source Voltage (VDS) 600 V —
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Operating Junction Temperature Range -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Package PG-VSON-4 (Thin-PAK) surface mount PG-VSON-4 (ThinPAK) Surface Mount
Mounting Type Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — IPL60R210P6AUMA1
Series — CoolMOS™ P6
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 600 V
Continuous Drain Current (Id) @ Tc=25°C — 19.2 A
On-Resistance (RDS(on)) max — 210 mΩ
Power Dissipation (Pd) @ Tc=25°C — 151 W
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Operating Temperature Range — [DATA_NEEDED: Tj max / operating range]
MSL Level — [DATA_NEEDED: MSL rating]
Packaging — Tape & Reel
Packing Quantity — [DATA_NEEDED: reel qty]

Datasheets & Resources

Browse All Products Create BOM Request Quote