IPL60R180P6AUMA1 vs IPL60R210P6AUMA1 비교
다음의 상세 나란히 비교: IPL60R180P6AUMA1 제조: Infineon 및 IPL60R210P6AUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPL60R180P6AUMA1 | IPL60R210P6AUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.92 | $0.78 |
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) | MOSFET (Superjunction / CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) | — |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ | — |
| Power Dissipation (Ptot) at Tc=25°C | 176 W | — |
| 동작 접합 온도 범위 | -55 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC value] | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) | — |
| 패키지 | PG-VSON-4 (Thin-PAK) surface mount | PG-VSON-4 (ThinPAK) Surface Mount |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPL60R210P6AUMA1 |
| Series | — | CoolMOS™ P6 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 19.2 A |
| On-Resistance (RDS(on)) max | — | 210 mΩ |
| Power Dissipation (Pd) @ Tc=25°C | — | 151 W |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| 동작 온도 범위 | — | [DATA_NEEDED: Tj max / operating range] |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| Packaging | — | Tape & Reel |
| Packing Quantity | — | [DATA_NEEDED: reel qty] |