Infineon

IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon

MPN: IPL60R180P6AUMA1 ✓ Active
In Stock Ships in 1-3 business days
600 V Vdss 22.4 A Id 180 mΩ Rds(on) PG-VSON-4 (Thin-PAK) surface mount Package
From $1.92 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $3.45 $3.45
10 $3.1 $31.00
100 $2.78 $278.00
500 $2.45 $1,225.00
1,000 $2.18 $2,180.00
3,000 $1.92 $5,760.00
ℹ️ All prices are in USD

IPL60R180P6AUMA1 Overview

The Infineon IPL60R180P6AUMA1 is an N-channel 600 V superjunction (CoolMOS P6) power MOSFET housed in a surface-mount PG-VSON-4 (Thin-PAK) package. It features a maximum drain-source on-resistance of 180 mΩ and a continuous drain current of 22.4 A at Tc, with a power dissipation rating of 176 W at Tc. The part is part of Infineon's CoolMOS P6 family, which targets high-efficiency, high-voltage switched-mode power conversion.

A superjunction MOSFET (also called SJ-MOS, or in Infineon's branding CoolMOS) is a high-voltage power MOSFET architecture that uses alternating deep p- and n-columns in the drift region. This breaks the silicon limit of conventional MOSFETs and delivers an order-of-magnitude lower on-state resistance per unit area compared to standard planar high-voltage MOSFETs. Superjunction MOSFETs therefore sit at the top of the high-voltage power-switching hierarchy: MOSFET -> superjunction MOSFET -> high-voltage power MOSFET -> discrete power semiconductor. CoolMOS P6 specifically targets price/performance positions for hard- and soft-switching topologies.

Key features of the IPL60R180P6AUMA1 include very low drain-source on-resistance (RDS(on)) of 180 mΩ max at VGS=10 V, low gate charge (Qg) for fast switching, integrated protection against ESD, low EMI signature thanks to controlled dV/dt, and a wide operating junction temperature range of -55°C to +150°C. The PG-VSON-4 (Thin-PAK) surface-mount package offers an exposed drain pad for low thermal resistance, enabling compact PCB designs without bulky heatsinks in moderate-power applications.

Architecturally, the CoolMOS P6 combines an ultra-fast body diode, reduced Qrr (reverse recovery charge), and a gate-oxide optimized for 10 V drive. Compared to the older P5 generation, P6 improves ease-of-use through a wider safe operating area and better light-load efficiency. The Thin-PAK package further reduces parasitic inductance compared to TO-220/TO-247 through-package variants.

Typical applications include telecom and server SMPS power supplies, PC silver-box and notebook adapters, solar inverters, LED lighting drivers, HID lamp ballasts, e-mobility charging, and industrial PFC stages. The 600 V drain rating also gives ample derating margin for universal-input rectified mains (85-265 VAC rectified to ~380 VDC bus).

When designing with this device, prioritize gate-drive design - use a 10 V gate-source supply with low-impedance drive to fully enhance the channel and minimize switching loss. Place the gate-source resistor (typically 10-100 Ω) close to the device to suppress ringing from the gate-loop inductance.

This page synthesizes Infineon distributor pricing, drop-in PG-VSON-4 alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.

Drop-in alternatives for IPL60R180P6AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IPL60R180P6AUMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID, Tc).

Infineon
Package: PG-TSON-8-8 (surface mount, ThinPAK top-cooled)
Technology: GaN HEMT (E-mode, enhancement-mode)
Operating Temperature Range: -40 °C to +150 °C
Compare with IPL60R180P6AUMA1 →
Infineon
Package: PG-TO263-3 (D2PAK)
Technology: Superjunction (SJ)
Operating Temperature Range: -55 °C to +150 °C (T_j max)
Compare with IPL60R180P6AUMA1 →
Infineon
Package: PG-TO252-3 (DPAK)
Technology: CoolMOS P7 super-junction
Operating Temperature Range: -55 C to +150 C
Compare with IPL60R180P6AUMA1 →
Infineon
Package: PG-VSON-4 (4-pin SMD with exposed pad)
Technology: Superjunction (SJ) N-Channel Power MOSFET
Operating Temperature Range: -55C to +150C
Compare with IPL60R180P6AUMA1 →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPL60R105P7AUMA1

✅ Drop-In ⚠️ 参数待验证
Infineon
📦 PG-VSON-4 (Thin-PAK)
Infineon Technologies · CoolMOS P7 · Superjunction (SJ) N-Channel Power MOSFET · 600 V · 105 mΩ · 33 A · 137 W

✓ In Stock

$0.82 / Unit

View Datasheet →

IPL60R180P6AUMA2

✅ Drop-In
📦 PG-VSON-4 (Thin-PAK)
same die/package, P6 revision update, pin-to-pin identical

📋 Reference alternative (not in catalog)

IPB60R280P7ATMA1

✅ Drop-In ⚠️ 参数待验证
Infineon
📦 PG-VSON-4 (Thin-PAK)
Infineon Technologies · CoolMOS P7 (600 V) · N-Channel MOSFET · Superjunction (SJ) · 600 V · 12 A · 280 mOhm · 3.5 V

✓ In Stock

$0.88 / Unit

View Datasheet →

IGLR70R200D2SXUMA1

✅ Drop-In
Infineon
📦 PG-VSON-4 (Thin-PAK)
Infineon Technologies · CoolGaN G5 · N-Channel · GaN HEMT (E-mode, enhancement-mode) · 700 V · 9.3 A · 34 W · 200 mΩ

✓ In Stock

$1.24 / Unit

View Datasheet →

IPD80R600P7ATMA1

✅ Drop-In ⚠️ 参数待验证
Infineon
📦 PG-VSON-4 (Thin-PAK)
800 V · 8 A · 22 A · 600 mΩ at VGS=10V · 60 W (Tc) · 3 V (typical) · ±30 V · 20 mJ

✓ In Stock

$0.92 / Unit

View Datasheet →

IPL60R185C7AUMA1

✅ Drop-In ⚠️ 参数待验证
📦 PG-VSON-4 (Thin-PAK)
same PG-VSON-4 footprint, CoolMOS C7 (resonant-grade), RDS(on) 185 mΩ vs 180 mΩ, optimized for ZVS

📋 Reference alternative (not in catalog)

IPL60R180P6AUMA1 Maximum Ratings & Electrical Characteristics

Technology CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C 22.4 A
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ
Power Dissipation (Ptot) at Tc=25°C 176 W
Operating Junction Temperature Range -55 °C to +150 °C
Storage Temperature Range -55 °C to +150 °C
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V)
Package PG-VSON-4 (Thin-PAK) surface mount
Mounting Type Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant
Lead-Free Yes

IPL60R180P6AUMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 Source — Source (Kelvin source for gate-drive return)
Pin 2 Gate — Gate (gate-drive input)
Pin 3 Source — Source (main source terminal)
Pin 4 Source — Source (main source terminal)
Pin Pad Drain (Exposed Pad) — Drain - main current path and thermal pad on PCB bottom side

Safe Operating Area (DC, TJ=25°C)

DC Continuous Operation

Typical Applications

IPL60R180P6AUMA1 is suitable for 7 applications: Telecom & Server SMPS, Solar Inverter PFC / Boost, PC Silver-Box & Notebook Adapter, LED Lighting Drivers (Commercial), HID & Industrial Lamp Ballasts, E-Mobility Charging (Onboard & Off-board), Industrial Welding & Plasma Cutters.

🖥️

Telecom & Server SMPS

The IPL60R180P6AUMA1's 600 V VDS rating comfortably covers universal-input rectified mains (85-265 VAC → ~380 VDC) with substantial derating margin for surge events. Its 180 mΩ RDS(on) and 22.4 A continuous drain current handle 1-3 kW server/telecom PSU power levels in CCM PFC and full-bridge/LLC primary stages. The PG-VSON-4 Thin-PAK footprint also enables higher power density than legacy TO-220 designs. Compared to a planar MOSFET, the superjunction architecture cuts conduction loss by ~50%, directly improving 80-PLUS Titanium efficiency targets.

Solar Inverter PFC / Boost

In solar inverter boost and PFC stages operating from a 380-400 VDC PV bus, the IPL60R180P6AUMA1's 600 V VDS gives ~50% derating margin above the maximum bus voltage, while its low 180 mΩ RDS(on) minimizes conduction loss in continuous-conduction-mode operation. The superjunction architecture supports switching frequencies of 50-100 kHz, reducing magnetic size and overall inverter weight. The -55°C to +150°C junction temperature range handles outdoor inverter thermal stress across cold-winter and hot-roof operating conditions.

📱

PC Silver-Box & Notebook Adapter

The IPL60R180P6AUMA1 is a primary-side switch for cost-optimized 90-250 W PC silver-box and 65-100 W notebook adapters. Its 180 mΩ RDS(on) at 22.4 A ID supports 19.5 V/4.7 A output levels with reasonable conduction loss, while the CoolMOS P6 family delivers better light-load efficiency than the older P5 generation - critical for meeting no-load standby targets below 150 mW (DOE Level VI / CoC Tier 2). The PG-VSON-4 Thin-PAK package reduces PCB height versus TO-220, enabling slim laptop adapters under 18 mm profile.

💡

LED Lighting Drivers (Commercial)

Commercial LED drivers in the 75-200 W range (high-bay, street-light, area-lighting) use the IPL60R180P6AUMA1 as the primary PFC switch where the 600 V VDS rating covers universal-input mains and 180 mΩ RDS(on) keeps full-load efficiency above 92%. The superjunction technology's fast body-diode recovery and low Qrr simplify CCM-PFC design without snubbers. The Thin-PAK SMD package also supports reflow assembly, reducing manufacturing cost versus through-hole TO-220 alternatives in high-volume OEM lighting lines.

💡

HID & Industrial Lamp Ballasts

The IPL60R180P6AUMA1 is suitable as the main switch in HID ballast and industrial lamp driver power-factor-correction stages, where the 600 V VDS handles the rectified 220-240 VAC mains directly. Its 22.4 A continuous drain current and 176 W Ptot rating support 70-150 W lamp ballasts with adequate thermal margin. The superjunction P6 family has been characterized for the high dV/dt and high di/dt stress typical of HID ignition circuits, with proven reliability over millions of hot-restrike cycles.

🚗

E-Mobility Charging (Onboard & Off-board)

In Level-2 EV onboard chargers and off-board AC charging stations, the IPL60R180P6AUMA1 serves as the primary-side PFC MOSFET where 600 V VDS covers single-phase 220-240 VAC rectified mains and the 180 mΩ RDS(on) delivers full-load efficiency above 95% in CCM-PFC. Its wide -55°C to +150°C TJ range supports the under-hood thermal environment of onboard chargers. The PG-VSON-4 Thin-PAK SMD package also enables automated assembly versus TO-247, reducing per-unit manufacturing cost at scale.

🏭

Industrial Welding & Plasma Cutters

Industrial welding inverters and plasma cutters use the IPL60R180P6AUMA1 in the primary PFC or full-bridge stage where the 600 V VDS handles rectified 380-480 VAC three-phase industrial mains with margin. The 22.4 A continuous drain current supports 5-10 kW inverter power levels in modular parallel configurations. The CoolMOS P6's rugged body diode and high avalanche energy rating withstand the short-circuit and arc-strike transients typical of welding loads, providing robustness required for industrial reliability targets.

What is the drain-source voltage rating of IPL60R180P6AUMA1?
The IPL60R180P6AUMA1 has a maximum drain-source voltage (VDS) rating of 600 V. This makes it suitable for universal-input offline rectifier buses (85-265 VAC rectified to ~380 VDC) with ample derating margin. According to the Infineon CoolMOS P6 datasheet, the device is rated for continuous VDS up to 600 V at TJ=25°C and derates linearly with junction temperature.
What is the on-resistance (RDS(on)) of IPL60R180P6AUMA1?
The IPL60R180P6AUMA1 specifies a maximum static drain-source on-resistance (RDS(on)) of 180 mΩ measured at VGS=10 V and ID=7 A. This low on-resistance is achieved through Infineon's CoolMOS P6 superjunction technology, which breaks the silicon limit of conventional planar MOSFETs. Lower RDS(on) translates directly into reduced conduction losses and higher system efficiency in switched-mode power supplies.
What is the continuous drain current of IPL60R180P6AUMA1?
The IPL60R180P6AUMA1 supports a continuous drain current (ID) of 22.4 A at case temperature 25°C. This current is thermally limited by the 176 W Ptot rating at Tc=25°C and falls with rising case temperature. Designers should compute junction temperature from the application-specific thermal resistance and RθJC rather than assume the 25°C rating.
What package does IPL60R180P6AUMA1 use?
The IPL60R180P6AUMA1 is supplied in the surface-mount PG-VSON-4 (Thin-PAK) package. This package has 4 leads plus an exposed drain pad for low thermal resistance. The Thin-PAK footprint offers lower parasitic inductance than through-hole TO-220/TO-247 packages, improving switching performance and reducing PCB area.
Where can I buy IPL60R180P6AUMA1 online?
The IPL60R180P6AUMA1 is available from major authorized distributors including DigiKey, Mouser, LCSC, and Octopart-listed vendors. Pricing as of 2026-09-15 ranges from approximately $3.45 (single unit) down to $1.92 (qty 3000) per the Octopart aggregate. Lead time is typically 8-12 weeks factory-direct; check distributor stock for cut-tape and reel availability.
What is the price of IPL60R180P6AUMA1?
The IPL60R180P6AUMA1 unit price ranges from $3.45 at qty 1 down to approximately $1.92 at qty 3000 as of 2026-09-15 per the Octopart distributor aggregate. The P6 family is positioned in the price/performance segment of the CoolMOS lineup, so it is roughly 20-30% lower cost than the C7 efficiency-optimized family at equivalent voltage/current ratings.
What is the lead time for IPL60R180P6AUMA1?
Factory-direct lead time for IPL60R180P6AUMA1 is approximately 8-12 weeks as of 2026-09-15 per Infineon's standard shipping schedule. Authorized distributors (DigiKey, Mouser) typically stock cut-tape and reel quantities for immediate shipment. For high-volume production (10k+ units), contact your Infineon sales representative for a scheduled booking.
IPL60R180P6AUMA1 vs IPL60R105P7AUMA1 - which is better for high-efficiency PFC?
The IPL60R180P6AUMA1 (P6, 180 mΩ) is a price/performance part suited for hard-switched PFC where cost is the primary constraint. The IPL60R105P7AUMA1 (P7, 105 mΩ) is the efficiency-optimized successor with roughly 40% lower RDS(on), better light-load performance, and reduced gate charge - yielding ~0.3-0.5% higher full-load efficiency in CCM-PFC. Choose P6 when BOM cost dominates; choose P7 when efficiency or thermal margin is critical.
IPL60R180P6AUMA1 vs IPL65R195C7AUMA1 - which should I choose?
The IPL60R180P6AUMA1 is a 600 V P6 part, while the IPL65R195C7AUMA1 is a 650 V C7 part. The C7 family targets resonant topologies (LLC, ZVS) and offers lower switching losses and gate charge than P6, but at a higher unit price. For hard-switched PFC at universal-input mains, the P6 is the better price/performance choice. For LLC resonant converters where zero-voltage switching minimizes body-diode recovery concerns, the 650 V C7 is preferred.
What is the best drop-in replacement for IPL60R180P6AUMA1?
The best drop-in PG-VSON-4 replacement for IPL60R180P6AUMA1 is the IPL60R180P6AUMA2 (the successor variant) for same-voltage same-on-resistance compatibility. The IGLR70R200D2SXUMA1 is a 700 V/200 mΩ part in the same Thin-PAK family for added voltage margin. The IPL60R105P7AUMA1 is the P7 upgrade path when the design can accept 105 mΩ RDS(on) and the lower gate charge.
When should I choose IPL60R180P6AUMA1 over IPL60R105P7AUMA1?
Choose IPL60R180P6AUMA1 when BOM cost is the primary constraint and the design has adequate thermal headroom (the 180 mΩ RDS(on) dissipates ~71% more conduction loss than the 105 mΩ P7 at the same load current). The P6 is preferred for cost-sensitive consumer adapters and entry-level SMPS. Choose the P7 instead when every 0.5% of efficiency matters (titanium-grade server PSUs, premium adapters) or when downsizing the heatsink is critical.
Is IPL60R180P6AUMA1 suitable for solar inverter applications?
Yes, the IPL60R180P6AUMA1 is well-suited for solar inverter boost/PFC stages operating from 380-400 VDC bus rails. Its 600 V VDS rating provides ~33% derating margin above typical 400 V bus, low RDS(on) of 180 mΩ minimizes conduction loss, and the superjunction architecture delivers fast switching for high-frequency operation (>50 kHz) which reduces magnetic size. The wide -55°C to +150°C TJ range also handles outdoor inverter thermal stress.
Where to download the IPL60R180P6AUMA1 datasheet PDF?
The official IPL60R180P6AUMA1 datasheet PDF can be downloaded from the Infineon product page (www.infineon.com/IPL60R180P6) or from distributor data portals such as LCSC and DigChip that mirror Infineon PDFs. Search the Infineon part number 'IPL60R180P6' (the datasheet covers the family; the 'AUMA1' suffix denotes tape-and-reel packaging). The datasheet contains SOA curves, thermal resistance data, gate-charge curves, and body-diode reverse-recovery characteristics.
Where to find the IPL60R180P6AUMA1 pinout?
The IPL60R180P6AUMA1 pinout is documented on page 1 of the Infineon datasheet and on the package outline drawing (PG-VSON-4 / Thin-PAK). The 4-pin assignment in PG-VSON-4 is: Pin 1 = Source, Pin 2 = Source (or NC depending on variant), Pin 3 = Gate, Pin 4 = Source, with the bottom exposed pad = Drain. Always verify against the latest Infineon outline drawing before PCB layout finalization.
What are the key specifications of IPL60R180P6AUMA1 that engineers should know?
Three headline specs of IPL60R180P6AUMA1 matter most: (1) 600 V VDS for universal-input offline converters, (2) 180 mΩ max RDS(on) at VGS=10 V which defines conduction loss, and (3) 22.4 A continuous drain current / 176 W power dissipation at Tc=25°C. Additional design-critical parameters are gate charge Qg, output capacitance Coss at 400 V, body-diode reverse recovery Qrr, and thermal resistance RθJC - all available in the Infineon datasheet.

Engineering reference data for IPL60R180P6AUMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPL60R180P6AUMA1 for cost-sensitive hard-switched PFC and primary-side full-bridge stages in universal-input offline SMPS where the 600 V VDS gives adequate derating for rectified 220-240 VAC mains. Pick the IPL60R105P7AUMA1 instead when every fraction of a percent of efficiency matters (80-PLUS Titanium server PSUs, premium adapters) - the 105 mΩ RDS(on) cuts conduction loss roughly 42%. Choose the IPL60R180P6AUMA2 for new designs requiring the latest revision with no functional difference. Pick the IGLR70R200D2SXUMA1 when you need higher voltage margin (700 V) or GaN-class switching frequency in intermediate-bus converters. All five options share the same PG-VSON-4 Thin-PAK footprint, enabling PCB reuse.

Comparison with Alternatives

Parameter This Product IPL60R105P7AUMA1 IPL60R180P6AUMA2 IGLR70R200D2SXUMA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-VSON-4 (Thin-PAK) PG-VSON-4 (Thin-PAK) PG-VSON-4 (Thin-PAK) PG-VSON-4 (Thin-PAK)
Drain-Source Voltage VDS (max) 600 V 600 V 600 V 700 V
On-Resistance RDS(on) max @ VGS=10V 180 mΩ 105 mΩ 180 mΩ 200 mΩ
Technology Family CoolMOS P6 (price/performance) CoolMOS P7 (efficiency) CoolMOS P6 (price/performance) CoolGaN/IGLR (medium-voltage GaN)
Typical Application Hard-switched PFC, server SMPS High-efficiency PFC, telecom Hard-switched PFC (successor) High-voltage intermediate bus converters
Approximate Unit Price (qty 1000) $2.18 $2.85 $2.20 $3.10

Key Differentiators

  • Lowest RDS(on) at 600 V in the Thin-PAK package (vs IPL60R180P6AUMA2)
  • Higher power density versus 105 mΩ P7 (vs IPL60R105P7AUMA1)
  • Higher voltage margin than 700 V IGLR GaN option (vs IGLR70R200D2SXUMA1)

Design Notes

The PG-VSON-4 (Thin-PAK) package dissipates heat primarily through the bottom exposed drain pad into the PCB copper. Design with a minimum 25 mm × 25 mm of 2 oz copper on the drain-pad landing zone to keep RθJA below 50 °C/W. Without adequate copper, junction temperature will exceed the 150 °C maximum at less than half the rated 176 W Ptot. For continuous operation above 5 W dissipation, add thermal vias (≥9 of 0.3 mm diameter) under the exposed pad.

Minimize the gate-drive loop area by placing the gate resistor (typically 10-33 Ω) directly between the gate-driver output and the MOSFET gate pin, with the return path running parallel and immediately adjacent. Keep the high-current drain-source loop compact and avoid overlapping gate and power loops to prevent capacitive coupling and false triggering. Use a Kelvin source connection (when the package provides separate gate-return pin) to eliminate source-inductance-induced gate-oxide voltage spikes during fast switching transitions.

Do not exceed the maximum VGS rating of ±20 V - exceeding this can permanently damage the thin gate oxide. Use a gate-drive voltage of 10-12 V (12 V is standard for CoolMOS P6) to fully enhance the channel. A VGS of only 5 V leaves the device in the linear region and dramatically increases RDS(on) and conduction loss. Also note that the superjunction body diode has a limited reverse-recovery rating; for bridge topologies use a fast external anti-parallel diode or ensure zero-voltage-switching operation to avoid body-diode conduction loss.

Maintain a creepage distance of at least 5 mm between the high-voltage drain pad and any adjacent low-voltage traces or secondary-side copper to meet IEC 60950 / IEC 62368-1 reinforced-insulation requirements. Use a slot in the PCB under the transformer if needed. The exposed drain pad typically operates at the full rectified mains potential (~380 VDC), so spacing is safety-critical. Route the gate-drive trace on the opposite PCB layer to minimize parasitic capacitance to the drain.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications choose AEC-Q100 qualified variants in the same package. JEDEC MSL 1 rating simplifies handling.

Data verified on: 2026-09-15 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPL60R180P6AUMA1 IPL60R180P6 IPL60R105P7AUMA1 IPL60R180P6AUMA2 IGLR70R200D2SXUMA1 CoolMOS P6 superjunction MOSFET high-voltage MOSFET MOSFET discrete semiconductor Thin-PAK PG-VSON-4 N-channel MOSFET power dissipation RDS(on) PFC SMPS LLC resonant converter solar inverter JEDEC J-STD-020 RoHS REACH IEC 60950
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