IPL65R200CFD7AUMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPL65R200CFD7AUMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL65R200CFD7AUMA1
IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon
IPL65R200CFD7AUMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPL65R200CFD7AUMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS CFD7 | CoolMOSβ’ E6 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 650 V | β |
| Continuous Drain Current (ID, Tc) | 14 A | β |
| Power Dissipation (PD, Tc) | 81 W | β |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| Technology | CoolMOS Superjunction (SJ) | Superjunction (CoolMOSβ’) |
| Package | PG-VSON-4 | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | β |
| Body Diode | Fast-recovery intrinsic | β |
| Gate-Source ESD Protection | Yes (integrated) | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| MSL Level | β | 1 |