IPN80R1K4P7ATMA1 - 800V 4A CoolMOS P7 MOSFET | Infineon
MPN: IPN80R1K4P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.54 | $0.54 |
| 10 | $0.49 | $4.90 |
| 100 | $0.43 | $43.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.34 | $340.00 |
IPN80R1K4P7ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in power conversion topologies. The CoolMOS P7 family is built on Infineon's superjunction technology, refined over 18 years, which replaces the conventional planar DMOS structure with a deep-trench, charge-compensated drift region. This architecture collapses the historical trade-off between breakdown voltage and on-resistance, allowing the device to achieve very low RDS(on) per unit silicon area. Within the broader power-management taxonomy, MOSFETs sit alongside IGBTs as the workhorse discrete switches for AC-DC, DC-DC, and PFC stages.
Key features include a 1200 mOhm maximum RDS(on) at VGS = 10V, a 4A continuous drain current rating at case temperature, and 7W power dissipation capability. The PG-SOT223 surface-mount package offers a thermal pad that simplifies PCB heatsinking while keeping the device footprint compact. The CoolMOS P7 technology also delivers low gate charge, fast switching, and intrinsic body diode with good reverse-recovery behaviour.
The P7 series is optimised for hard- and soft-switching topologies including flyback, forward, and PFC boost stages. Its low specific on-resistance and reduced switching losses support higher switching frequencies, allowing designers to shrink magnetic components and improve power density. The wide 500V-950V class coverage makes the family applicable to universal-input mains designs (85-265VAC rectified to ~375V bus).
Typical applications include smartphone and tablet chargers, notebook adapters, LED lighting drivers, auxiliary power supplies for white goods, and industrial SMPS modules. The 800V drain rating provides comfortable margin above typical 400V PFC bus voltages seen in European mains designs.
When designing with this part, ensure the gate drive voltage reaches 10V for full RDS(on) specification and pay attention to creepage and clearance between drain pad and adjacent traces - the SOT223 tab is electrically connected to the drain.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single decision-ready reference for selecting the IPN80R1K4P7ATMA1.
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| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 (500V-950V) |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID, Tc) | 4 A |
| Static Drain-Source On-Resistance (RDS(on) max) | 1200 mOhm |
| Power Dissipation (Tc) | 7 W |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| Technology | Superjunction (CoolMOS P7) |
| Package | PG-SOT223 (surface mount) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C |
| RoHS Status | Compliant |
| Grade | Industrial |
IPN80R1K4P7ATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input (drive 10V for full RDS(on)) |
| Pin 2 | DRAIN — Drain terminal (also connected to tab) |
| Pin 3 | SOURCE — Source terminal |
| Pin 4 | DRAIN (TAB) — Drain tab/heatsink pad, electrically tied to pin 2 |
Safe Operating Area (DC, PG-SOT223)
Typical Applications
IPN80R1K4P7ATMA1 is suitable for 6 applications: Smartphone/Tablet Charger (Flyback Primary Switch), Notebook/Ultrabook Power Adapter, LED Lighting Drivers (Isolated Flyback), Auxiliary Power Supply in White Goods, Industrial Low-Power SMPS Modules, Universal-Input PFC Boost Stage (Low Power).
Smartphone/Tablet Charger (Flyback Primary Switch)
The IPN80R1K4P7ATMA1 is ideal for sub-30W universal-input flyback chargers for smartphones and tablets, where it serves as the primary-side MOSFET switching at 65-130 kHz. Its 800V breakdown easily tolerates the 375V rectified 230VAC bus with comfortable derating margin, while the 1200 mOhm RDS(on) keeps conduction loss acceptable at the 0.5-1A primary RMS typical of 10-20W adapters. The CoolMOS P7's low gate charge reduces drive losses, enabling compact flyback controllers like the XDPL8105 from Infineon or UCC28740 from TI to drive it directly from a 10V rail.
Recommended
Notebook/Ultrabook Power Adapter
In 45-65W notebook adapters, the IPN80R1K4P7ATMA1 functions as the main flyback or active-clamp flyback (ACF) primary switch. The 800V rating handles 230VAC universal-input transients and the 7W dissipation capability is sufficient given typical 70-80% efficiency targets. Designers can push switching frequency above 100 kHz thanks to the P7's reduced Eoss and Qg, shrinking the transformer core size. Pair with the IRSM808-105MH half-bridge driver for ACF topology or ICE2HS01G for hard-switched flyback.
Recommended
LED Lighting Drivers (Isolated Flyback)
The IPN80R1K4P7ATMA1 fits isolated LED driver designs for residential and commercial lighting from 10W to 40W output. Its 800V drain rating meets IEC 61000-3-2 harmonic standards with margin for input surge, while the PG-SOT223 surface-mount package enables slim, height-constrained bulb form factors. The CoolMOS P7's body diode supports the leakage-energy freewheeling in single-transistor flyback topologies. Compared to legacy 600V planar MOSFETs, the P7's lower conduction and switching losses raise driver efficiency by 1-2%, helping meet ENERGY STAR requirements.
Recommended
Auxiliary Power Supply in White Goods
Household appliances such as washing machines, refrigerators, and dishwashers need small standby/auxiliary SMPS modules to power microcontrollers and displays while the main motor is off. The IPN80R1K4P7ATMA1 suits these 5-15W modules with its 800V rating tolerating the rectified mains plus inductive spikes from relay switching, and its compact PG-SOT223 footprint keeps the aux supply board small. CoolMOS P7's ease-of-use means simple RCD-snubber design, reducing BOM and time-to-market for white-goods OEMs.
Recommended
Industrial Low-Power SMPS Modules
Industrial 24V/48V bus supplies and isolated sensor power modules in the 5-30W range benefit from the IPN80R1K4P7ATMA1's robustness. The 800V drain rating tolerates industrial mains transients per IEC 61000-4-4/4-5 surge testing, and the industrial grade temperature range supports deployment in factory automation cabinets. The CoolMOS P7 superjunction technology reduces switching losses enough to allow 130 kHz operation with simple thermal management, shrinking the planar transformer footprint in DIN-rail mounted supplies.
Recommended
Universal-Input PFC Boost Stage (Low Power)
Although 1200 mOhm RDS(on) is relatively high for PFC, the IPN80R1K4P7ATMA1 is viable in low-power (<75W) PFC boost stages where the boost switch sees only the rectified mains and not the full 400V bus. Its 800V breakdown gives design margin and the CoolMOS P7 family has integrated protection features. For compliance with IEC 61000-3-2 in low-power lighting or appliance designs, designers can use this part in transition-mode PFC at 65-130 kHz. For higher-power PFC, Infineon's IPL60R series with lower RDS(on) is recommended.
Recommended
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Engineering reference data for IPN80R1K4P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPN80R1K4P7 | IPN80R900P7ATMA1 | IPN80R1K2P7ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT223 | PG-SOT223 | PG-SOT223 | PG-SOT223 |
| Drain-Source Voltage (VDS max) | 800 V | 800 V | 800 V | 800 V |
| Continuous Drain Current (Tc) | 4 A | 4 A | 5 A | 4 A |
| RDS(on) max (VGS=10V) | 1200 mOhm | 1200 mOhm | 900 mOhm | 1200 mOhm |
| Power Dissipation (Tc) | 7 W | 7 W | 8 W | 7 W |
| Technology | CoolMOS P7 superjunction | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 |
| Operating Temperature Range | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
Key Differentiators
- CoolMOS P7 superjunction technology vs planar 800V MOSFETs (vs Generic 800V planar MOSFET)
- Compact PG-SOT223 surface-mount outline vs TO-220/TO-252 packages (vs IPP80R1K4P7 (TO-220/IPAK))
- Tighter RDS(on) grading in P7 family (vs IPN80R900P7ATMA1 (sister 900 mOhm part))
Design Notes
Estimated: at VBUS=375V (230VAC rectified), peak ID=2A, and 100 kHz flyback operation with 40% duty cycle, primary RMS is ~0.8A giving conduction loss of 0.77W and switching losses approximately 0.3W (estimated from P7 family datasheet curves). Total ~1.1W in PG-SOT223 with adequate PCB copper (1 sq-inch copper pour) keeps Tj rise below 50C above ambient. Always mount the SOT223 tab to a copper pour of at least 100 mm^2 to stay within thermal limits.
The PG-SOT223 tab is electrically tied to the drain (a high-voltage node in flyback/PFC). Maintain at least 6 mm creepage and clearance from the drain tab to any secondary-side or user-accessible copper to meet IEC 60950 / IEC 62368 spacing. Use a slot in the PCB or keep-out polygon around the tab. Place gate-drive and feedback traces on the source-side of the package, routed away from the drain node to minimise dv/dt-induced noise injection.
Do not operate the gate below 10V - at 7-8V VGS the CoolMOS P7 may be only partially enhanced and RDS(on) can rise 2-3x, causing thermal runaway. Use a 12V or 15V auxiliary rail with adequate decoupling rather than bootstrapping from VDD. Avoid exceeding VGS=±20V absolute maximum, which can puncture the gate oxide; many gate-driver ICs include internal clamps. For universal-input designs, verify start-up surge waveforms do not exceed VDS=800V including avalanche from leakage inductance - if so, add a snubber or use a 900V-class P7 part instead.
Compliance Information
RoHS and halogen-free per Infineon product page. Industrial grade - not AEC-Q100 qualified; for automotive applications consult Infineon's automotive-grade CoolMOS portfolio.
