IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon
MPN: IPB027N10N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.12 | $3.12 |
| 10 | $2.74 | $27.40 |
| 100 | $2.31 | $231.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.62 | $1,620.00 |
Drop-in alternatives for IPB027N10N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB025N10N3GATMA1
✅ Drop-In✓ In Stock
$3.74 / Unit
View Datasheet →IPB027N10N3GATMA2
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPB120N10S405ATMA1
✅ Drop-In✓ In Stock
$2.1 / Unit
View Datasheet →IPP147N12N3GXKSA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →BSC070N10NS5ATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →IPB027N10N3GATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A |
| Power Dissipation (PD) at TC=25°C | 300 W |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Operating Temperature Range | -55°C to +175°C (TJ) |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IPB027N10N3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input (driven by gate driver circuit, typically 0-10V) |
| Pin 2 | Drain — Power drain connection (electrically common with the metal tab) |
| Pin 3 | Source — Power source connection (power return) |
| Pin Tab | Drain — Metal tab electrically common with Drain pin 2, used for thermal dissipation |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPB027N10N3GATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Server and Telecom OR-ing, Motor Drive H-Bridge (48V Systems), High-Current Hot-Swap / E-Fuse, Solar Inverter DC-DC Stage, Industrial Battery Protection (48V Li-ion).
48V Telecom Synchronous Rectification
The IPB027N10N3GATMA1 is ideally suited as the secondary-side synchronous rectifier in 48V-input telecom and server SMPS. Its 2.7mΩ typical RDS(on) at VGS=10V minimizes conduction loss in continuous-conduction-mode (CCM) forward converters, while the 100V VDS rating provides ample margin for the typical 60-70V reflected voltage plus transient spikes. In a 30A output design, this part dissipates only ~2.4W (vs ~5W for a 5mΩ part), enabling cooler operation and higher power density. Designers pair it with a UCC28951 or similar secondary-side SR controller to drive the gate with proper timing and dead-time control.
Recommended
Server and Telecom OR-ing
In redundant -48V power distribution, the IPB027N10N3GATMA1 serves as the OR-ing MOSFET that isolates failed power supplies. Its 120A continuous current rating handles full load bus current, while the 2.7mΩ RDS(on) limits voltage drop to ~32mV at 12A (much less than a Schottky diode's 300-500mV drop), eliminating the need for a secondary cooling system. The 100V rating exceeds the -75V worst-case telecom transient spec, providing robust protection. Combined with an LM5069 or hot-swap controller, the system achieves true active current sharing and reverse-current blocking.
Recommended
Motor Drive H-Bridge (48V Systems)
For 48V brushless DC motor drives in e-bikes, robotics, and industrial automation, the IPB027N10N3GATMA1 forms the high-side and low-side switches of a 3-phase inverter. Its 120A current rating supports motor currents up to ~60A per phase (with two MOSFETs in parallel per switch), while the 100V VDS handles back-EMF spikes up to ~80V from a 48V nominal bus. The D2PAK package allows direct PCB heatsinking to the motor controller's aluminum baseplate. Designers gate-drive the part with gate resistors in the 10-47Ω range to control switching transients and ringing.
Recommended
High-Current Hot-Swap / E-Fuse
As the switching element in a 48V hot-swap or electronic fuse circuit, the IPB027N10N3GATMA1 protects backplane connectors from inrush current during card insertion. Its 120A rating supports typical 40-60A server sleds, and the low RDS(on) keeps the steady-state voltage drop small. A dedicated hot-swap controller (LM5069, ADM1073) drives the gate with controlled dV/dt ramp to limit inrush to safe levels. The 100V VDS rating handles the worst-case -75V telecom transient plus inductive ringing.
Recommended
Solar Inverter DC-DC Stage
In solar micro-inverter or DC-DC optimizer applications, the IPB027N10N3GATMA1 can serve as the primary-side switch in a 60-80V input buck converter stepping down to 24V or 48V battery bus. Its 2.7mΩ RDS(on) at full 10V gate drive achieves >97% efficiency at moderate switching frequencies (50-100kHz). The 100V VDS comfortably exceeds 80V max solar panel Voc at cold temperature. A UCC28950 phase-shifted full-bridge controller pairs well with this MOSFET in higher-power 1-3kW designs.
Recommended
Industrial Battery Protection (48V Li-ion)
In 48V lithium-ion battery packs for e-mobility, telecom backup, and energy storage, the IPB027N10N3GATMA1 can act as the main disconnect MOSFET. Its 120A continuous rating handles peak discharge currents, while the 100V VDS exceeds the 58V max charging voltage of a 16S Li-ion pack with margin. The low RDS(on) reduces heat dissipation during high-current discharge, improving system efficiency. Pair with a battery management IC such as the BQ76952 for cell balancing and over-current protection.
Recommended
Recommended Products Summary
Engineering reference data for IPB027N10N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB025N10N3GATMA1 | IPB027N10N3GATMA2 | IPB120N10S405ATMA1 | IPP147N12N3GXKSA1 | BSC070N10NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS max | 100 V | 100 V | 100 V | 100 V | 120 V | 100 V |
| Continuous Drain Current (TC=25°C) | 120 A | 120 A | 120 A | 120 A | 147 A | 70 A |
| RDS(on) typ at VGS=10V | 2.7 mΩ | 2.5 mΩ | 2.7 mΩ | 4 mΩ | 8 mΩ | 7 mΩ |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 4 | OptiMOS 3 | OptiMOS 5 |
| Power Dissipation (TC=25°C) | 300 W | 300 W | 300 W | 300 W | 300 W | [DATA_NEEDED] |
| Primary Use Case | Lowest RDS(on) 100V OptiMOS 3 | Slightly lower RDS(on) same family | Reel packaging variant of target | Higher current headroom, OptiMOS 4 | 120V rating for higher transient margin | Newer generation, lower switching loss |
Key Differentiators
- Lowest RDS(on) in 100V OptiMOS 3 family (vs IPB120N10S405ATMA1)
- 100V VDS optimized for 48V bus applications (vs IPP147N12N3GXKSA1)
- Established OptiMOS 3 generation (vs BSC070N10NS5ATMA1)
Design Notes
Estimated: at 30A continuous load and 2.7mΩ RDS(on), this part dissipates ~2.4W. With D2PAK RθJC of ~0.5°C/W (per Infineon datasheet convention), junction-to-case rise is ~1.2°C above the tab. The actual case-to-ambient rise depends entirely on the PCB copper-pour area; a 1 sq-inch 2oz copper pad keeps RθJA around 30°C/W, while 4 sq inches reduces it to ~15°C/W. For sustained 60-80A operation, attach an external heatsink directly to the metal tab with thermal compound.
The D2PAK footprint requires a substantial drain copper pour that doubles as the heatsink. Recommended footprint: drain pad ~10x15mm with 2oz copper (minimum 1 sq inch total), gate pad routed to the driver with a 5-10mm wide trace, and source pad Kelvin-connected back to the gate-driver ground to suppress source-bounce from high di/dt. Multiple thermal vias (0.3mm diameter, 1mm pitch) under the tab drop the case-to-ambient resistance by 30-50%.
Do not operate the gate below 8V at high current - RDS(on) doubles to ~5mΩ at VGS=6V and triples at VGS=4.5V, dissipating far more heat than expected. Also avoid exceeding ±20V on the gate; transient spikes from gate-driver parasitic inductance can punch through the thin gate oxide. Always use a gate-source resistor (10-100kΩ) to hold the part off during controller power-up, and place a 10-22V Zener or TVS across gate-source for additional protection in noisy environments.
In synchronous-rectifier layouts, the high-side and low-side MOSFETs should be placed with their source pads sharing a small, tight switching node region to minimize parasitic inductance. Use a 4-layer PCB with a dedicated ground plane (layer 2) and a power-plane (layer 3) to provide low-impedance return paths. The gate-drive loop area (gate resistor -> gate -> source -> gate-driver ground) should be minimized to under 1 sq cm to suppress ringing and EMI.
Compliance Information
RoHS and lead-free per DigiKey product listing (2080890). Standard industrial grade; for automotive AEC-Q100 qualified variants consult Infineon. Conflict-minerals compliance per Infineon's published CMRT filings.
