IPT007N06NATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveInfineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPT007N06NATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.54 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Power Dissipation (PD, TC=25C) | 375 W | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55Β°C to +150Β°C |
| Package | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | β |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | Yes |
| Standard Pack Quantity | 3000 (Tape & Reel) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |