IPT007N06NATMA1 vs BSC027N04LSGATMA1 Perbandingan
Perbandingan bersamaan detil IPT007N06NATMA1 dari Infineon dan BSC027N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPT007N06NATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Rentang Suhu Kerja | -55 C to +175 C (TJ) | -55°C to +150°C |
| Paket | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| Level MSL | MSL 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | Yes |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Tipe Transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| Dissipasi Listrik (TC=25°C) | — | 83 W |