IPT022N10NF2SATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IPT022N10NF2SATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT022N10NF2SATMA1

IPT022N10NF2SATMA1 - 100V 2.2mΞ© StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IPT022N10NF2SATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.99 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family StrongIRFET 2 OptiMOS 7 Power-Transistor
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 100 V β€”
Continuous Drain Current (Id) at Ta 29 A β€”
Continuous Drain Current (Id) at Tc 236 A β€”
Typical RDS(on) at VGS=10V 2.2 mΞ© β€”
Power Dissipation at Ta 3.8 W β€”
Power Dissipation at Tc 250 W β€”
Package PG-HSOF-8-10 (8 leads + tab) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Technology Trench MOSFET Trench MOSFET, silicon
Operating Temperature Range -55C to +175C -55 Β°C to +175 Β°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] β€”
RoHS Status Compliant β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)
MSL Level β€” MSL 1 (per JEDEC J-STD-020)

Datasheets & Resources

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