IPT65R040CFD7XTMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPT65R040CFD7XTMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT65R040CFD7XTMA1
IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon
IPT65R040CFD7XTMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPT65R040CFD7XTMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.95 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | β |
| Technology | Superjunction N-channel MOSFET | Superjunction (CoolMOSβ’) |
| Drain-Source Voltage (V(BR)DSS) | 650 V | β |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | β |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | β |
| Continuous Drain Current ID (TC=25C) | 63 A | β |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | β |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | β |
| Package | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | β |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | β |
| Operating Temperature Range | -55C to +150C [DATA_NEEDED: confirm junction range] | -55 Β°C to +150 Β°C |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | 1 |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | β |
| Series | β | CoolMOSβ’ E6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| RoHS Status | β | Compliant |