IPT65R040CFD7XTMA1 vs IPD65R380E6ATMA1 对比

详细并排对比 IPT65R040CFD7XTMA1 出自 Infineon 和 IPD65R380E6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPT65R040CFD7XTMA1 IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon

IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon

IPT65R040CFD7XTMA1 ✓ 量产中

规格对比

参数 IPT65R040CFD7XTMA1 IPD65R380E6ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.95 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS CFD7 —
Technology Superjunction N-channel MOSFET Superjunction (CoolMOS™)
Drain-Source Voltage (V(BR)DSS) 650 V —
Maximum On-State Resistance RDS(on) max 40 mOhm at VGS=10 V —
Typical On-State Resistance RDS(on) typ 34 mOhm —
Continuous Drain Current ID (TC=25C) 63 A —
Gate Threshold Voltage VGS(th) 3.5 V typical [DATA_NEEDED: full min/max] —
Gate-Source Voltage VGS max [DATA_NEEDED: +/-20 V typical for CFD7] —
封装 PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) PG-TO252-3 (DPAK), surface mount
安装类型 Surface Mount Surface Mount
Topology Suitability LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC —
Body Diode Integrated fast body diode (low Qrr, hard-commutation rugged) —
工作温度范围 -55C to +150C [DATA_NEEDED: confirm junction range] -55 °C to +150 °C
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] 1
Automotive Qualification Industrial grade (AEC-Q101 variants exist separately) —
Series — CoolMOS™ E6
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 650 V
Continuous Drain Current (I_D) at T_C — 10.6 A
R_DS(on) max at V_GS=10V — 380 mΩ
R_DS(on) test conditions — 3.2 A, 10 V
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 3.5 V typ
Gate Charge (Q_G) — 39 nC at 10 V
Input Capacitance (C_iss) — 710 pF at 100 V
Power Dissipation (P_D) at T_C — 83 W
RoHS 状态 — Compliant

数据手册与资源

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