IPT65R040CFD7XTMA1 vs IPD65R380E6ATMA1 비교

다음의 상세 나란히 비교: IPT65R040CFD7XTMA1 제조: Infineon 및 IPD65R380E6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPT65R040CFD7XTMA1 IPD65R380E6ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.95 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS CFD7 —
Technology Superjunction N-channel MOSFET Superjunction (CoolMOS™)
Drain-Source Voltage (V(BR)DSS) 650 V —
Maximum On-State Resistance RDS(on) max 40 mOhm at VGS=10 V —
Typical On-State Resistance RDS(on) typ 34 mOhm —
Continuous Drain Current ID (TC=25C) 63 A —
Gate Threshold Voltage VGS(th) 3.5 V typical [DATA_NEEDED: full min/max] —
Gate-Source Voltage VGS max [DATA_NEEDED: +/-20 V typical for CFD7] —
패키지 PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) PG-TO252-3 (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Topology Suitability LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC —
Body Diode Integrated fast body diode (low Qrr, hard-commutation rugged) —
동작 온도 범위 -55C to +150C [DATA_NEEDED: confirm junction range] -55 °C to +150 °C
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] 1
Automotive Qualification Industrial grade (AEC-Q101 variants exist separately) —
Series — CoolMOS™ E6
트랜지스터 유형 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 650 V
Continuous Drain Current (I_D) at T_C — 10.6 A
R_DS(on) max at V_GS=10V — 380 mΩ
R_DS(on) test conditions — 3.2 A, 10 V
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 3.5 V typ
Gate Charge (Q_G) — 39 nC at 10 V
Input Capacitance (C_iss) — 710 pF at 100 V
Power Dissipation (P_D) at T_C — 83 W
RoHS 상태 — Compliant

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