IPTC017N12NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IPTC017N12NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΞ© 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPTC017N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.95 | $0.78 |
| Technology | OptiMOS 6, N-channel trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 120 V | 80 V |
| Continuous Drain Current (ID, Ta) | 32 A | β |
| Continuous Drain Current (ID, Tc) | 331 A | β |
| On-State Resistance RDS(on) max | 1.7 mΞ© at VGS = 10 V | β |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | β |
| Total Gate Charge QG | 141 nC at VGS = 10 V | β |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | β |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | β |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 395 W | β |
| Package | PG-HDSOP-16 (Surface Mount) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (TJ max) | -55 Β°C to +175 Β°C |
| Gate Drive Voltage (recommended) | 10 V | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |