IQD005N04NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IQD005N04NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD005N04NM6ATMA1
IQD005N04NM6ATMA1 - 40V 0.5mΞ© N-Ch MOSFET PG-TSON-8-9 | Infineon
IQD005N04NM6ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQD005N04NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at Ta=25C | 58 A | β |
| Pulsed Drain Current (IDM) at Tc | 610 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 0.5 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| Package | PG-TSON-8-9 (PQFN 5x6 mm) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |