IQD016N08NM5ATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IQD016N08NM5ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD016N08NM5ATMA1

IQD016N08NM5ATMA1 - 80V 1.6mΞ© OptiMOS 5 N-MOSFET | Infineon

IQD016N08NM5ATMA1 βœ“ Active
Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter IQD016N08NM5ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.68 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (Ta) 31 A β€”
Continuous Drain Current (Tc) 323 A β€”
On-Resistance RDS(on) typical 1.6 mΞ© β€”
Power Dissipation (Ta) 3 W 2.3 W
Power Dissipation (Tc) 333 W 65 W
Package PG-TSON-8-9 (PQFN 5x6) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 Power-MOSFET Trench MOSFET (OptiMOS 3)
Operating Temperature Range -55C to +150C (junction, standard MOSFET rating) β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge Qg [DATA_NEEDED: Qg typical] β€”
RoHS Status Compliant β€”
Series β€” OptiMOS 3
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
Gate Threshold Voltage (VGS(th)) β€” 4 V (max, typical)
On-Resistance RDS(on) max β€” 7.6 mOhm
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Operating Junction Temperature β€” -55 C to +175 C
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)
FET Type β€” 2x N-Channel MOSFET array

Datasheets & Resources

Browse All Products Create BOM Request Quote