IQD016N08NM5ATMA1 vs BSC076N04NDATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD016N08NM5ATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQD016N08NM5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 323 A | — |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | 2.3 W |
| Power Dissipation (Tc) | 333 W | 65 W |
| Kemasan | PG-TSON-8-9 (PQFN 5x6) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | Trench MOSFET (OptiMOS 3) |
| Gambaran Suhu Operasi | -55C to +150C (junction, standard MOSFET rating) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| Status RoHS | Compliant | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Kemasan / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |