IQD016N08NM5ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IQD016N08NM5ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IQD016N08NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 323 A | — |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | Trench MOSFET, silicon |
| Operating Temperature Range | -55C to +150C (junction, standard MOSFET rating) | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| RoHS Status | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| MSL Level | — | MSL 1 (per JEDEC J-STD-020) |