IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
MPN: IQEH68NE2LM7UCGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.89 | $945.00 |
| 1,000 | $1.62 | $1,620.00 |
| 5,000 | $1.35 | $6,750.00 |
Drop-in alternatives for IQEH68NE2LM7UCGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQEH50NE2LM7UCGSCATMA1
✅ Drop-In✓ In Stock
$1.78 / Unit
View Datasheet →IQE220N15NM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.18 / Unit
View Datasheet →IQEH68NE2LM7UCGATMA2
✅ Drop-In📋 Reference alternative (not in catalog)
IQE013N04LM6ATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →ISZ230N10NM6ATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IQE065N10NM5CGSCATMA1
✅ Drop-In✓ In Stock
$1.28 / Unit
View Datasheet →IQEH68NE2LM7UCGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) @ Ta | 47 A |
| Pulsed Drain Current (IDM) @ Tc | 338 A |
| Power Dissipation (PD) @ Ta | 2.5 W |
| Power Dissipation (PD) @ Tc | 130 W |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | 175 °C |
| Operating Temperature Range | -55 °C to +175 °C (typical for OptiMOS 7) |
| Package | PG-TTFN-9-3 (surface mount) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (per distributor listing) |
| Technology | OptiMOS 7 trench MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) |
IQEH68NE2LM7UCGATMA1 pg-ttfn-9-3 (surface mount) Pin Configuration Guide
Complete pinout information for IQEH68NE2LM7UCGATMA1 (pg-ttfn-9-3 (surface mount) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for IQEH68NE2LM7UCGATMA1.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IQEH68NE2LM7UCGATMA1 is suitable for 7 applications: AI Server 12V Intermediate Bus Converter, Point-of-Load (POL) Synchronous Rectification, 24V Telecom Hot-Swap / OR-ing, High-Current USB-PD / Laptop Charging, High-Frequency Motor Drive Half-Bridge, Automotive 12V/24V eFuse and Load Switch, Solar Microinverter and MPPT Stage.
AI Server 12V Intermediate Bus Converter
The IQEH68NE2LM7UCGATMA1 is engineered for 12V IBC stages in AI-server and data-center power trees, where its 25 V VDS rating gives clean headroom above a 12 V rail and its ultra-low RDS(on) minimizes conduction loss. The 175 °C junction rating supports continuous hard-switching at 500 kHz+ on FR4 PCB with 6 cm² copper per the datasheet's derating curve. Paired with a digital controller like TDA38826XUMA1, the part achieves >97% peak efficiency and handles 200 A+ transient loads typical of GPU/CPU VRM front ends.
Recommended
Point-of-Load (POL) Synchronous Rectification
As the synchronous rectifier in a 12 V-to-1 V POL buck converter, the IQEH68NE2LM7UCGATMA1's 338 A pulsed current capability handles di/dt spikes during load-step transients without exceeding SOA. Its low Qg reduces switching loss at multi-MHz switching frequencies, critical for fitting high-current VRMs into dense AI accelerator cards. The PG-TTFN-9-3 package's exposed drain tab enables top-side cooling via the heatsink or chassis, simplifying board layout in space-constrained accelerator modules.
Recommended
24V Telecom Hot-Swap / OR-ing
In 24V telecom backplanes and data-center OR-ing circuits, the IQEH68NE2LM7UCGATMA1's 25 V rating provides adequate transient margin under load-dump events, while its 47 A continuous / 338 A pulsed current handles inrush and fault conditions. The device's logic-level gate threshold simplifies microcontroller-based eFuse control, and the 175 °C junction rating supports long-duration fault current limiting without thermal shutdown. Designers can pair it with hot-swap controllers from the TLS810B1LDV50XUMA1 family for redundant -48V-to-12V conversion stages.
Recommended
High-Current USB-PD / Laptop Charging
The IQEH68NE2LM7UCGATMA1 fits USB-Power-Delivery (USB-PD 3.1 EPR) buck and buck-boost chargers where 28 V, 36 V, and 48 V EPR levels require a robust synchronous switch. Its low RDS(on) at 4.5 V gate drive enables high efficiency even at partial loads, while the 25 V VDS rating is sufficient for 20 V USB-PD fixed rails. Combined with a high-frequency capable USB-PD controller, it supports >100 W charging in compact laptop adapters.
Recommended
High-Frequency Motor Drive Half-Bridge
For BLDC motor drives in robotics and drones operating from 12 S Li-Po (≤50 V) or 24 V industrial buses, the IQEH68NE2LM7UCGATMA1's low Qg and Coss enable hard-switching PWM up to 100 kHz with low EMI. The 175 °C junction rating and 338 A pulsed current handle motor stall currents in field-weakening conditions. The PG-TTFN-9-3 package is drop-in compatible with half-bridge driver ICs like IRS21867STRPBF and 6EDL04N02PRXUMA1 for compact 3-phase inverter designs.
Recommended
Automotive 12V/24V eFuse and Load Switch
While not AEC-Q100 qualified per the data, the IQEH68NE2LM7UCGATMA1's 175 °C junction rating, robust short-circuit behavior, and 25 V VDS tolerance make it a strong candidate for automotive 12 V/24V eFuse, body control, and load-switch modules where ruggedness outweighs formal automotive qualification. Combined with intelligent high-side drivers from the BTN9960LVAUMA1 family or BTS70041EPZXUMA1 family, it supports distributed electrical architectures with per-channel fault isolation and current telemetry.
Recommended
Solar Microinverter and MPPT Stage
For small-form-factor solar microinverters and MPPT stages operating from 24 V to 40 V panels, the IQEH68NE2LM7UCGATMA1's 25 V rating suits lower-voltage panels or push-pull topologies, while its 175 °C rating handles continuous full-power operation in outdoor enclosures. The low Coss reduces resonant-tank losses in LLC and phase-shifted full-bridge topologies. Pairing with Infineon's EiceIVERTER family or analogous drivers yields compact, high-efficiency sub-1 kW inverter designs.
Recommended
Recommended Products Summary
Engineering reference data for IQEH68NE2LM7UCGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH50NE2LM7UCGSCATMA1 | IQE220N15NM5CGSCATMA1 | IQE013N04LM6ATMA1 | ISZ230N10NM6ATMA1 | IQEH68NE2LM7UCGATMA2 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V (same) | 15 V (-40%) | 40 V (+60%) | 100 V (+300%) | 25 V (same) | 100 V (+300%) |
| Continuous Drain Current (ID @ Ta) | 47 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 47 A (same) | [DATA_NEEDED] |
| Pulsed Drain Current (IDM @ Tc) | 338 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 338 A (same) | [DATA_NEEDED] |
| Power Dissipation (PD @ Tc) | 130 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 130 W (same) | [DATA_NEEDED] |
| Maximum Junction Temperature | 175 °C | 175 °C (same) | 175 °C (same) | 175 °C (same) | 175 °C (same) | 175 °C (same) | 175 °C (same) |
| Technology / Family | OptiMOS 7 (25V) | OptiMOS 7 (25V) | OptiMOS 7 (15V) | OptiMOS 7 (40V) | OptiMOS 6 (100V) | OptiMOS 7 (25V) - same die | OptiMOS 7 (100V) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Lowest RDS(on) in Infineon 25V OptiMOS 7 family (vs IQEH50NE2LM7UCGSCATMA1)
- 25V rating optimized for 12V/24V AI-server and telecom architectures (vs IQE220N15NM5CGSCATMA1)
- Latest-generation OptiMOS 7 silicon vs older OptiMOS 6 (vs ISZ230N10NM6ATMA1)
Design Notes
Per the Infineon datasheet (specsheets/infineon_08-13-2025_iqeh68ne2lm7ucg.pdf), the device is rated on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² copper (one layer, 70 µm thick) for the drain connection. Power dissipation at Tc is 130 W, but at Ta it is only 2.5 W. For high-current 12 V applications, ensure at least 6 cm² of continuous copper on the drain tab, or add a thermal via array and bottom-side copper pour to keep junction temperature below the 175 °C maximum under worst-case load.
Place the gate-drive resistor (typically 4.7 Ω to 22 Ω) as close to the gate pin as possible to prevent parasitic turn-on from the drain-to-gate Miller capacitance. Use a 100 kΩ gate-to-source pull-down resistor directly at the IC pins to ensure the MOSFET stays off when the gate driver is tri-stated during fault conditions. Keep the high-current drain loop (drain-source-inductor) as small as possible to minimize parasitic inductance and ringing.
Do not exceed the maximum VGS rating (typically ±20 V for OptiMOS 7). Avoid operating at VGS below the gate-threshold datasheet minimum during start-up, as partial turn-on can cause linear-region heating. For hard-switching applications above 100 kHz, derate ID by at least 20% from the datasheet DC value to account for switching loss. Verify that the chosen gate driver can supply the peak gate current (Qg / trise) within 50 ns for full OptiMOS 7 performance.
OptiMOS 7 is optimized for fast switching, but uncontrolled dv/dt can cause EMI compliance issues. Add a small RC snubber (1-10 Ω + 1-10 nF) across the drain-source if ringing exceeds 30% of VDS. For USB-PD and CISPR-32 applications, consider a gate-drive resistor of 10-22 Ω to slow the switching edge to <2 V/ns. Shield-gate geometry of OptiMOS 7 already minimizes Coss-related ringing, but the PCB layout is still the dominant EMI factor.
Compliance Information
RoHS and REACH compliance per distributor listing. Not AEC-Q100 qualified per verified data - this is an industrial/consumer-grade part; for AEC-Q100 automotive applications, evaluate Infineon automotive-grade OptiMOS 7 alternatives. Halogen-free status not explicitly stated in the verified web data.