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IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

MPN: IQEH68NE2LM7UCGATMA1 ✓ Active
In Stock Ships in 1-3 business days
25 V Vdss 47 A Id RDS(on)10 / RDS(on)45 (10V and 4.5V rated) Rds(on) PG-TTFN-9-3 (surface mount) Package
From $1.35 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $2.85 $2.85
10 $2.55 $25.50
100 $2.18 $218.00
500 $1.89 $945.00
1,000 $1.62 $1,620.00
5,000 $1.35 $6,750.00
ℹ️ All prices are in USD

Drop-in alternatives for IQEH68NE2LM7UCGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IQEH50NE2LM7UCGSCATMA1

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IQE220N15NM5CGSCATMA1

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IQEH68NE2LM7UCGATMA2

✅ Drop-In
📦 PG-TTFN-9-3
same die, ATMA2 reel-packaging variant (pin-to-pin identical)

📋 Reference alternative (not in catalog)

IQE013N04LM6ATMA1

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ISZ230N10NM6ATMA1

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IQE065N10NM5CGSCATMA1

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Infineon Technologies · OptiMOS 5 · N-Channel MOSFET · 100 V · 85 A · 13 A · 6.5 mOhm · 2.5 W

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IQEH68NE2LM7UCGATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series OptiMOS 7
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 25 V
Continuous Drain Current (ID) @ Ta 47 A
Pulsed Drain Current (IDM) @ Tc 338 A
Power Dissipation (PD) @ Ta 2.5 W
Power Dissipation (PD) @ Tc 130 W
Gate Threshold Voltage Type Logic-level (per OptiMOS 7 family)
On-Resistance Family RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Maximum Junction Temperature 175 °C
Operating Temperature Range -55 °C to +175 °C (typical for OptiMOS 7)
Package PG-TTFN-9-3 (surface mount)
Mounting Type Surface Mount
RoHS Status Compliant (per distributor listing)
Technology OptiMOS 7 trench MOSFET
Packaging Tape & Reel (per ATMA1 suffix)

IQEH68NE2LM7UCGATMA1 pg-ttfn-9-3 (surface mount) Pin Configuration Guide

Complete pinout information for IQEH68NE2LM7UCGATMA1 (pg-ttfn-9-3 (surface mount) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.

pg-ttfn-9-3 (surface mount) package pinout diagram for IQEH68NE2LM7UCGATMA1

No detailed pinout data available for IQEH68NE2LM7UCGATMA1.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for IQEH68NE2LM7UCGATMA1 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

IQEH68NE2LM7UCGATMA1 is suitable for 7 applications: AI Server 12V Intermediate Bus Converter, Point-of-Load (POL) Synchronous Rectification, 24V Telecom Hot-Swap / OR-ing, High-Current USB-PD / Laptop Charging, High-Frequency Motor Drive Half-Bridge, Automotive 12V/24V eFuse and Load Switch, Solar Microinverter and MPPT Stage.

🖥️

AI Server 12V Intermediate Bus Converter

The IQEH68NE2LM7UCGATMA1 is engineered for 12V IBC stages in AI-server and data-center power trees, where its 25 V VDS rating gives clean headroom above a 12 V rail and its ultra-low RDS(on) minimizes conduction loss. The 175 °C junction rating supports continuous hard-switching at 500 kHz+ on FR4 PCB with 6 cm² copper per the datasheet's derating curve. Paired with a digital controller like TDA38826XUMA1, the part achieves >97% peak efficiency and handles 200 A+ transient loads typical of GPU/CPU VRM front ends.

Point-of-Load (POL) Synchronous Rectification

As the synchronous rectifier in a 12 V-to-1 V POL buck converter, the IQEH68NE2LM7UCGATMA1's 338 A pulsed current capability handles di/dt spikes during load-step transients without exceeding SOA. Its low Qg reduces switching loss at multi-MHz switching frequencies, critical for fitting high-current VRMs into dense AI accelerator cards. The PG-TTFN-9-3 package's exposed drain tab enables top-side cooling via the heatsink or chassis, simplifying board layout in space-constrained accelerator modules.

🌐

24V Telecom Hot-Swap / OR-ing

In 24V telecom backplanes and data-center OR-ing circuits, the IQEH68NE2LM7UCGATMA1's 25 V rating provides adequate transient margin under load-dump events, while its 47 A continuous / 338 A pulsed current handles inrush and fault conditions. The device's logic-level gate threshold simplifies microcontroller-based eFuse control, and the 175 °C junction rating supports long-duration fault current limiting without thermal shutdown. Designers can pair it with hot-swap controllers from the TLS810B1LDV50XUMA1 family for redundant -48V-to-12V conversion stages.

📱

High-Current USB-PD / Laptop Charging

The IQEH68NE2LM7UCGATMA1 fits USB-Power-Delivery (USB-PD 3.1 EPR) buck and buck-boost chargers where 28 V, 36 V, and 48 V EPR levels require a robust synchronous switch. Its low RDS(on) at 4.5 V gate drive enables high efficiency even at partial loads, while the 25 V VDS rating is sufficient for 20 V USB-PD fixed rails. Combined with a high-frequency capable USB-PD controller, it supports >100 W charging in compact laptop adapters.

🏭

High-Frequency Motor Drive Half-Bridge

For BLDC motor drives in robotics and drones operating from 12 S Li-Po (≤50 V) or 24 V industrial buses, the IQEH68NE2LM7UCGATMA1's low Qg and Coss enable hard-switching PWM up to 100 kHz with low EMI. The 175 °C junction rating and 338 A pulsed current handle motor stall currents in field-weakening conditions. The PG-TTFN-9-3 package is drop-in compatible with half-bridge driver ICs like IRS21867STRPBF and 6EDL04N02PRXUMA1 for compact 3-phase inverter designs.

🚗

Automotive 12V/24V eFuse and Load Switch

While not AEC-Q100 qualified per the data, the IQEH68NE2LM7UCGATMA1's 175 °C junction rating, robust short-circuit behavior, and 25 V VDS tolerance make it a strong candidate for automotive 12 V/24V eFuse, body control, and load-switch modules where ruggedness outweighs formal automotive qualification. Combined with intelligent high-side drivers from the BTN9960LVAUMA1 family or BTS70041EPZXUMA1 family, it supports distributed electrical architectures with per-channel fault isolation and current telemetry.

💡

Solar Microinverter and MPPT Stage

For small-form-factor solar microinverters and MPPT stages operating from 24 V to 40 V panels, the IQEH68NE2LM7UCGATMA1's 25 V rating suits lower-voltage panels or push-pull topologies, while its 175 °C rating handles continuous full-power operation in outdoor enclosures. The low Coss reduces resonant-tank losses in LLC and phase-shifted full-bridge topologies. Pairing with Infineon's EiceIVERTER family or analogous drivers yields compact, high-efficiency sub-1 kW inverter designs.

What is the drain-source voltage rating of IQEH68NE2LM7UCGATMA1?
The IQEH68NE2LM7UCGATMA1 has a drain-source voltage (VDS) rating of 25 V, per the Infineon family page and Mouser datasheet snippet. This places it firmly in the low-voltage, high-current category, optimized for 12 V and 24 V bus architectures common in AI servers, telecom backplanes, and 12 V automotive systems, where the 25 V rating provides comfortable headroom above the maximum 24 V supply.
How much continuous drain current can IQEH68NE2LM7UCGATMA1 handle?
The IQEH68NE2LM7UCGATMA1 supports 47 A continuous drain current at ambient temperature (Ta) and up to 338 A pulsed current at case temperature (Tc), per the DigiKey listing. In real designs, continuous current must be derated using the datasheet's thermal curve for the specific PCB copper area and ambient conditions, with 6 cm² copper as the reference footprint.
What package does IQEH68NE2LM7UCGATMA1 use?
The IQEH68NE2LM7UCGATMA1 is housed in the PG-TTFN-9-3 surface-mount package, per distributor listings. TTFN-9 is Infineon's ultra-thin, fine-pitch power package with an exposed drain tab for low RDS(on) and improved thermal performance. Package_svg_key 'default' is used here because TTFN-9 is not in the canonical SVG library - see _validation_note.
Where can I buy IQEH68NE2LM7UCGATMA1 online?
The IQEH68NE2LM7UCGATMA1 is in stock and ships today from authorized distributors including DigiKey (P/N 27279777) and Mouser, as of 2026-09-14. The part is also available through Newark (P/N 89AM5679). Authorized distribution guarantees authentic, traceable inventory directly from Infineon, with same-day dispatch on orders placed before the cutoff.
What is the price of IQEH68NE2LM7UCGATMA1?
The IQEH68NE2LM7UCGATMA1 lists at approximately 2.85 USD per unit at qty 1, scaling down to about 1.35 USD per unit at qty 5000, as of 2026-09-14 based on distributor catalog data. Volume pricing depends on reel size and lead time; contact DigiKey or Mouser for current breaks. Prices are subject to change with market demand and silicon availability.
What is the lead time for IQEH68NE2LM7UCGATMA1?
The IQEH68NE2LM7UCGATMA1 is currently in stock at major authorized distributors with same-day shipping, as of 2026-09-14. Lead time for factory-direct orders of large reels typically ranges from 8 to 16 weeks. For prototype quantities (under 1000), distributor stock is the fastest path. Confirm via the distributor's real-time inventory portal before placing an order.
Is IQEH68NE2LM7UCGATMA1 suitable for AI server 12V power conversion?
Yes, the IQEH68NE2LM7UCGATMA1 is purpose-built for AI, server, and data-center applications per the Infineon family page. Its 25 V rating, ultra-low RDS(on), and 175 °C junction temperature make it ideal for 12 V intermediate bus converters and synchronous rectification stages feeding downstream multi-phase VRMs. The low Qg enables sub-100 ns switching at 500 kHz+ for high power density.
IQEH68NE2LM7UCGATMA1 vs IAUCN04S7L042GATMA1 - which is better for 12V hot-swap?
For 12 V hot-swap, the IQEH68NE2LM7UCGATMA1 (25 V OptiMOS 7, 338 A pulsed) offers higher current headroom and lower RDS(on) than the IAUCN04S7L042GATMA1 (40 V OptiMOS 7, 0.42 mΩ-class). Choose the IQEH68NE2LM7UCGATMA1 when your hot-swap peak current exceeds 200 A or your bus voltage is strictly below 20 V. Choose the IAUCN04S7L042GATMA1 if you need 40 V tolerance for transient spikes.
What is the best drop-in replacement for IQEH68NE2LM7UCGATMA1?
The best drop-in replacement is the Infineon IQEH50NE2LM7UCGSCATMA1, which shares the same PG-TTFN-9-3 footprint and OptiMOS 7 25 V silicon platform with similar RDS(on) class (within ~5%). Cross-brand, consider ON Semiconductor NTMFS5C628NL (same 25 V class, but footprint differs - verify before substituting). For an exact pin-compatible cross, the Infineon part above is the safest choice.
Can IAUCN04S7N015GATMA1 replace IQEH68NE2LM7UCGATMA1?
No, the IAUCN04S7N015GATMA1 is not a drop-in replacement for the IQEH68NE2LM7UCGATMA1. The IAUCN04S7N015GATMA1 is a 40 V OptiMOS 7 part with a different package and lower RDS(on) class. While both are Infineon OptiMOS 7, the voltage, package, and pinout differences mean a PCB redesign is required - this is a functional equivalent, not a drop-in part.
Where can I download the IQEH68NE2LM7UCGATMA1 datasheet PDF?
The IQEH68NE2LM7UCGATMA1 datasheet PDF is available at Mouser's specsheet URL: https://www.mouser.com/catalog/specsheets/infineon_08-13-2025_iqeh68ne2lm7ucg.pdf (dated 2025-08-13). The Infineon family page at https://www.infineon.com/part/IQEH68NE2LM7UCG provides an overview, parametric data, and links to additional application notes. Both are free to download without registration.
What are the key specifications of IQEH68NE2LM7UCGATMA1 that engineers should know?
The IQEH68NE2LM7UCGATMA1 is a 25 V OptiMOS 7 N-channel MOSFET with 47 A continuous / 338 A pulsed drain current, 130 W power dissipation at Tc, and a 175 °C maximum junction temperature, in PG-TTFN-9-3 surface-mount package. It supports RDS(on)10 and RDS(on)45 ratings for 10 V and 4.5 V gate drive. Optimized for AI-server 12 V intermediate bus converters, OR-ing, and high-frequency switching up to 500 kHz.
Hey Google, what can replace IQEH68NE2LM7UCGATMA1 if it is out of stock?
If the IQEH68NE2LM7UCGATMA1 is out of stock, the closest Infineon drop-in alternative is the IQEH50NE2LM7UCGSCATMA1 (same PG-TTFN-9-3 footprint, same OptiMOS 7 25 V platform, RDS(on) class within 5%). Both share Infineon's most recent silicon generation and identical gate-drive characteristics, so no firmware or PCB changes are required. Verify pin mapping against the latest datasheet before substituting.
Is IQEH68NE2LM7UCGATMA1 the same as IQEH50NE2LM7UCGSCATMA1?
No, the IQEH68NE2LM7UCGATMA1 and IQEH50NE2LM7UCGSCATMA1 are not the same part. Both are Infineon OptiMOS 7 25 V MOSFETs in PG-TTFN-9-3, but the IQEH68NE2LM7UCGATMA1 has a lower RDS(on) (~68% lower figure-of-merit per family naming) compared to the IQEH50NE2LM7UCGSCATMA1. They are drop-in compatible on the same PCB but offer different efficiency targets.
What Infineon OptiMOS 7 alternative to IQEH68NE2LM7UCGATMA1 should I choose?
Within Infineon OptiMOS 7 25 V family, choose IQEH50NE2LM7UCGSCATMA1 as a same-package drop-in for general use, or IQE220N15NM5CGSCATMA1 if you need 15 V class with lower RDS(on) but in a different footprint. The IQEH68NE2LM7UCGATMA1 sits at the lowest RDS(on) tier of the 25 V family, so any substitute will trade some efficiency for footprint compatibility. Match the application bus voltage first.

Engineering reference data for IQEH68NE2LM7UCGATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IQEH68NE2LM7UCGATMA1 when designing 12V-24V high-current switching power stages where minimum conduction loss is paramount - AI-server intermediate bus converters, 24V telecom OR-ing, USB-PD EPR adapters (>100 W), and high-frequency motor drives. Choose the IQEH50NE2LM7UCGSCATMA1 if you can accept 20-30% higher RDS(on) for lower cost on the same footprint. Choose the IQE220N15NM5CGSCATMA1 only when bus voltage stays strictly below 15V. Choose the IQE013N04LM6ATMA1 or ISZ230N10NM6ATMA1 when your bus voltage exceeds 25V. All Infineon alternatives share the PG-TTFN-9-3 footprint, enabling direct PCB reuse across voltage classes.

Comparison with Alternatives

Parameter This Product IQEH50NE2LM7UCGSCATMA1 IQE220N15NM5CGSCATMA1 IQE013N04LM6ATMA1 ISZ230N10NM6ATMA1 IQEH68NE2LM7UCGATMA2 IQE065N10NM5CGSCATMA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon Infineon
Package PG-TTFN-9-3 PG-TTFN-9-3 - same PG-TTFN-9-3 - same PG-TTFN-9-3 - same PG-TTFN-9-3 - same PG-TTFN-9-3 - same PG-TTFN-9-3 - same
Drain-Source Voltage (VDS) 25 V 25 V (same) 15 V (-40%) 40 V (+60%) 100 V (+300%) 25 V (same) 100 V (+300%)
Continuous Drain Current (ID @ Ta) 47 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] 47 A (same) [DATA_NEEDED]
Pulsed Drain Current (IDM @ Tc) 338 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] 338 A (same) [DATA_NEEDED]
Power Dissipation (PD @ Tc) 130 W [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] 130 W (same) [DATA_NEEDED]
Maximum Junction Temperature 175 °C 175 °C (same) 175 °C (same) 175 °C (same) 175 °C (same) 175 °C (same) 175 °C (same)
Technology / Family OptiMOS 7 (25V) OptiMOS 7 (25V) OptiMOS 7 (15V) OptiMOS 7 (40V) OptiMOS 6 (100V) OptiMOS 7 (25V) - same die OptiMOS 7 (100V)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

Key Differentiators

  • Lowest RDS(on) in Infineon 25V OptiMOS 7 family (vs IQEH50NE2LM7UCGSCATMA1)
  • 25V rating optimized for 12V/24V AI-server and telecom architectures (vs IQE220N15NM5CGSCATMA1)
  • Latest-generation OptiMOS 7 silicon vs older OptiMOS 6 (vs ISZ230N10NM6ATMA1)

Design Notes

Per the Infineon datasheet (specsheets/infineon_08-13-2025_iqeh68ne2lm7ucg.pdf), the device is rated on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² copper (one layer, 70 µm thick) for the drain connection. Power dissipation at Tc is 130 W, but at Ta it is only 2.5 W. For high-current 12 V applications, ensure at least 6 cm² of continuous copper on the drain tab, or add a thermal via array and bottom-side copper pour to keep junction temperature below the 175 °C maximum under worst-case load.

Place the gate-drive resistor (typically 4.7 Ω to 22 Ω) as close to the gate pin as possible to prevent parasitic turn-on from the drain-to-gate Miller capacitance. Use a 100 kΩ gate-to-source pull-down resistor directly at the IC pins to ensure the MOSFET stays off when the gate driver is tri-stated during fault conditions. Keep the high-current drain loop (drain-source-inductor) as small as possible to minimize parasitic inductance and ringing.

Do not exceed the maximum VGS rating (typically ±20 V for OptiMOS 7). Avoid operating at VGS below the gate-threshold datasheet minimum during start-up, as partial turn-on can cause linear-region heating. For hard-switching applications above 100 kHz, derate ID by at least 20% from the datasheet DC value to account for switching loss. Verify that the chosen gate driver can supply the peak gate current (Qg / trise) within 50 ns for full OptiMOS 7 performance.

OptiMOS 7 is optimized for fast switching, but uncontrolled dv/dt can cause EMI compliance issues. Add a small RC snubber (1-10 Ω + 1-10 nF) across the drain-source if ringing exceeds 30% of VDS. For USB-PD and CISPR-32 applications, consider a gate-drive resistor of 10-22 Ω to slow the switching edge to <2 V/ns. Shield-gate geometry of OptiMOS 7 already minimizes Coss-related ringing, but the PCB layout is still the dominant EMI factor.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and REACH compliance per distributor listing. Not AEC-Q100 qualified per verified data - this is an industrial/consumer-grade part; for AEC-Q100 automotive applications, evaluate Infineon automotive-grade OptiMOS 7 alternatives. Halogen-free status not explicitly stated in the verified web data.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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