IQDH35N03LM5SCATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQDH35N03LM5SCATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH35N03LM5SCATMA1

IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon

IQDH35N03LM5SCATMA1 βœ“ Active
Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQDH35N03LM5SCATMA1 IQDH29NE2LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $1.84
Manufacturer Infineon Technologies β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) max 30 V β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Continuous Drain Current (ID) at Ta 66 A β€”
Pulsed Drain Current (IDM) at Tc 700 A β€”
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 278 W β€”
Package PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-WHTFN-9-U02 (WHTFN EP)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C β€”
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Marking IQDH35N03LM5S β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 25 V
Continuous Drain Current (Ta) β€” 75 A
Continuous Drain Current (Tc) β€” 789 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 278 W
Maximum On-Resistance RDS(on) β€” 0.29 mΞ©
Gate Threshold Voltage VGS(th) β€” 2 V (typ)
Pin Count β€” 9
Cooling β€” Dual-side exposed pad (top + bottom)

Datasheets & Resources

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