Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

MPN: IQE004NE1LM7CGATMA1 ✓ Active
In Stock Ships in 1-3 business days
15 V Vdss 58 A Id 0.45 mOhm at VGS=10 V Rds(on) PG-TTFN-9-3 (surface mount) Package
From $1.06 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.62 $1.62
10 $1.55 $15.50
100 $1.42 $142.00
500 $1.29 $645.00
1,000 $1.18 $1,180.00
5,000 $1.06 $5,300.00
ℹ️ All prices are in USD

Drop-in alternatives for IQE004NE1LM7CGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

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IQE004NE1LM7CG

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same die, tray packaging (no reel suffix), identical electrical specs

📋 Reference alternative (not in catalog)

ISC0805NLSATMA1

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IQE004NE1LM7CGATMA1

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ISC058N04NM5ATMA1

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IQE004NE1LM7CGATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series OptiMOS 7
Technology N-Channel Trench Power MOSFET
Drain-Source Voltage (VDS) 15 V
Continuous Drain Current (ID, TA=25C) 58 A
Continuous Drain Current (ID, TC=25C) 379 A
Power Dissipation (TA=25C) 2.1 W
Power Dissipation (TC=25C) 89 W
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V
Package PG-TTFN-9-3 (surface mount)
Mounting Type Surface Mount
Operating Temperature -55C to +150C (junction)
RoHS Status Compliant
Packaging Tape & Reel (CGATMA1 suffix)
Polarization N-Channel

IQE004NE1LM7CGATMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 G — Gate (Kelvin-source capable)
Pin 2 D — Drain
Pin 3 D — Drain
Pin 4 D — Drain
Pin 5 D — Drain
Pin 6 S — Source (Kelvin return)
Pin 7 S — Source
Pin 8 S — Source
Pin 9 S — Source

Safe Operating Area (DC, TA=25C)

DC Continuous Operation

Typical Applications

IQE004NE1LM7CGATMA1 is suitable for 6 applications: 12V Synchronous Rectification in Server VRMs, USB-PD and Type-C Power Delivery Sinks, Hot-Swap and ORing Switches in Telecom Racks, Battery Management and Protection in E-Mobility, Industrial POL Converters and PoE Applications, Solar Battery Storage MPPT Stages.

🖥️

12V Synchronous Rectification in Server VRMs

The IQE004NE1LM7CGATMA1's 0.45 mOhm RDS(on) and 15 V VDS rating make it ideal for the low-side synchronous MOSFET position in 12 V input buck converters that power server CPUs and GPUs. At 50 A continuous load, conduction loss in this part is approximately I^2 * RDS(on) = 1.13 W per switch, which keeps the junction temperature rise within safe limits on a 2 oz copper 1 square inch land pattern. The OptiMOS 7 trench cell design also provides low Qg and Qgd for multi-hundred-kHz switching, minimizing crossover losses that dominate efficiency at light to medium load.

USB-PD and Type-C Power Delivery Sinks

For USB-PD sink applications negotiating 5 V, 9 V, 12 V, and 15 V profiles, the IQE004NE1LM7CGATMA1 provides the synchronous FET for the buck stage converting the Type-C VBUS to downstream load rails. Its 0.45 mOhm RDS(on) keeps efficiency above 97 percent at 5 A on the 12 V profile, critical for thermal compliance in small form-factor chargers. The 15 V rating gives adequate margin for 20 V PPS negotiation spikes when paired with appropriate snubbing.

🔧

Hot-Swap and ORing Switches in Telecom Racks

The IQE004NE1LM7CGATMA1 is well suited for the ORing FET in -48 V telecom rectifier outputs and 12 V distributed bus architectures, where its ultra-low RDS(on) minimizes voltage drop and power dissipation across the ORing element. At 30 A continuous, conduction loss is just 0.4 W, eliminating the need for external heatsinking. The 15 V rating covers standard 12 V bus applications; for -48 V telecom rails a 100 V part from the OptiMOS 7 family should be selected instead.

🚗

Battery Management and Protection in E-Mobility

In 12 V and 48 V mild-hybrid battery management systems, the IQE004NE1LM7CGATMA1 serves as the low-loss protection FET on the battery rail. Its 0.45 mOhm RDS(on) contributes minimal voltage drop during cranking pulses, while the 15 V rating safely contains 12 V lead-acid transient spikes up to load-dump levels when paired with TVS protection. The PG-TTFN-9-3 package's exposed thermal pad supports the high inrush currents during engine start events.

🏭

Industrial POL Converters and PoE Applications

The IQE004NE1LM7CGATMA1 is used as the synchronous rectifier in industrial 12 V input point-of-load buck converters powering FPGAs, ASICs, and industrial Ethernet PHYs. Its low Qg enables switching frequencies up to 1 MHz, reducing the size of output inductors and capacitors in dense POL designs. The 0.45 mOhm RDS(on) ensures high efficiency across the full industrial load range, from standby to peak computing loads.

💡

Solar Battery Storage MPPT Stages

In low-voltage solar battery storage systems with 12 V battery bus, the IQE004NE1LM7CGATMA1 functions as the synchronous rectifier in the MPPT buck stage that charges lead-acid or Li-ion banks. Its 15 V VDS rating is appropriate for the 12 V battery rail plus recharge headroom, while the 0.45 mOhm RDS(on) maximizes charge efficiency and minimizes thermal stress in enclosed outdoor enclosures. The PG-TTFN-9-3 package's small footprint suits compact PCB designs.

What is the IQE004NE1LM7CGATMA1 and what does it do?
The IQE004NE1LM7CGATMA1 is an Infineon OptiMOS 7 N-channel trench power MOSFET rated at 15 V VDS with an ultra-low 0.45 mOhm RDS(on). According to the Infineon datasheet, it delivers up to 379 A pulsed drain current in the surface-mount PG-TTFN-9-3 package. It is designed for synchronous rectification and high-current switching in 12 V SMPS applications.
What is the maximum drain-source voltage of IQE004NE1LM7CGATMA1?
The IQE004NE1LM7CGATMA1 is rated for a maximum drain-source voltage (VDS) of 15 V. According to the Infineon datasheet, this VDS rating is suitable for 12 V rails, point-of-load converters, USB-PD applications, and ORing/hot-swap circuits where transient overshoot must be kept below 15 V under all operating conditions including avalanche events.
What is the RDS(on) of IQE004NE1LM7CGATMA1?
The IQE004NE1LM7CGATMA1 has a maximum on-resistance RDS(on) of 0.45 mOhm when driven with VGS=10 V. According to the Infineon datasheet, this ultra-low RDS(on) is achieved with OptiMOS 7 trench technology and the low-resistance PG-TTFN-9-3 package. At lower gate drive (VGS=4.5 V) the RDS(on) typically increases, so a 10 V gate driver is recommended for full performance.
What is the difference between IQE004NE1LM7 and IQE004NE1LM7CGATMA1?
The IQE004NE1LM7 is the base ordering part number (bare part on tray), while IQE004NE1LM7CGATMA1 is the same silicon die and PG-TTFN-9-3 package supplied on tape-and-reel for SMT assembly. According to Infineon ordering conventions, the CGATMA1 suffix adds reeled packaging with a 13-inch reel and is the preferred code for OEM high-volume assembly.
Where to buy IQE004NE1LM7CGATMA1 online?
IQE004NE1LM7CGATMA1 is in stock at authorized distributors including DigiKey, Mouser, and LCSC Electronics, with prices starting from approximately $1.51 at LCSC and $1.62 at DigiKey for qty 1, as of 2026-09-14. Octopart aggregates stock across five distributors for real-time comparison. All authorized sources ship the original Infineon factory reel.
What is the lead time for IQE004NE1LM7CGATMA1?
Lead time for IQE004NE1LM7CGATMA1 is currently factory stock with same-day shipping from DigiKey and Mouser as of 2026-09-14. Bulk quantities (10k+) typically ship from Infineon distributor warehouse within 4-6 weeks. For automotive PPAP volumes, contact your Infineon FAE to confirm direct-factory allocation.
Is IQE004NE1LM7CGATMA1 in stock at distributors?
Yes, IQE004NE1LM7CGATMA1 is confirmed in stock at DigiKey, Mouser, and LCSC as of 2026-09-14. According to distributor listings, DigiKey shows factory stock of several thousand units ready for immediate shipment. Always check Octopart for the latest 5-distributor aggregator view.
IQE004NE1LM7CGATMA1 vs BSC027N10NS5ATMA1 - which is better for 12V synchronous rectification?
The IQE004NE1LM7CGATMA1 (15 V, 0.45 mOhm, PG-TTFN-9-3) is the better 12 V synchronous rectifier because it is a true 15 V part optimized for 12 V rails, while the BSC027N10NS5ATMA1 is a 100 V part with higher RDS(on) overkill for 12 V. According to Infineon's OptiMOS 7 versus OptiMOS 5 datasheets, the IQE004NE1LM7CGATMA1 also offers lower Qg and smaller package footprint for high-frequency designs.
What is the best drop-in replacement for IQE004NE1LM7CGATMA1?
The best drop-in replacement for IQE004NE1LM7CGATMA1 in the same PG-TTFN-9-3 footprint is the Infineon IQE008N03LM5ATMA1 (same family, 30 V rating, slightly higher RDS(on)) or the ISC011N06LM5ATMA1 (60 V upgrade). Both share pin compatibility and are sourced from the same Infineon OptiMOS family. Cross-brand drops are limited because the PG-TTFN-9-3 footprint is Infineon-proprietary.
What is the best ON Semiconductor equivalent for IQE004NE1LM7CGATMA1?
The closest ON Semiconductor (onsemi) cross-reference for IQE004NE1LM7CGATMA1 in a similar 15 V N-channel MOSFET class is the NTMFS5C628NL or NVMFS5C670NL, both with sub-milliohm RDS(on) in a Power33/56 package. According to onsemi's MOSFET selector guide, neither is pin-compatible with the PG-TTFN-9-3 package, so a PCB footprint redesign would be required - they are functional equivalents only, not drop-in.
When should I choose IQE004NE1LM7CGATMA1 over IQE008N03LM5ATMA1?
Choose IQE004NE1LM7CGATMA1 over IQE008N03LM5ATMA1 when the application is strictly 12 V and you need the lowest possible RDS(on) of 0.45 mOhm for maximum efficiency. Choose IQE008N03LM5ATMA1 when you need higher VDS margin (30 V) for hot-swap or transient-heavy designs, accepting slightly higher conduction loss. Both share the PG-TTFN-9-3 footprint and are drop-in compatible.
Is IQE004NE1LM7CGATMA1 suitable for USB-PD 100W applications?
Yes, the IQE004NE1LM7CGATMA1 is highly suitable for USB-PD 100W (20 V/5 A) buck and synchronous rectification topologies. According to the Infineon datasheet, its 0.45 mOhm RDS(on) and 15 V rating make it ideal for 12 V input conversion. For 20 V output (PPS), pair it with a 30 V part from the same family for sufficient VDS margin.
Where to download IQE004NE1LM7CGATMA1 datasheet PDF?
The official IQE004NE1LM7CGATMA1 datasheet can be downloaded as a PDF from the Infineon product page at infineon.com/part/IQE004NE1LM7. According to the Infineon website, the datasheet contains electrical characteristics, SOA curves, thermal data, and package drawings. A mirrored copy is also available on alldatasheet.com (11 pages, 1.02 MB).
Where to find IQE004NE1LM7CGATMA1 pinout and PG-TTFN-9-3 package drawing?
The pinout for IQE004NE1LM7CGATMA1 in the PG-TTFN-9-3 package is documented in the manufacturer datasheet on page 1 of the Infineon datasheet. According to the Infineon website, the PG-TTFN-9-3 is a 5 mm x 6 mm surface-mount package with 9 leads and exposed thermal pad, featuring a Kelvin-source pin for high-frequency gate driving.
What are the key specifications of IQE004NE1LM7CGATMA1 that engineers should know?
Engineers specifying IQE004NE1LM7CGATMA1 should know three headline specs: 15 V VDS maximum, 0.45 mOhm RDS(on) at VGS=10 V, and 379 A pulsed drain current in the PG-TTFN-9-3 package. According to the Infineon OptiMOS 7 datasheet, the part also delivers low Qg for multi-hundred-kHz switching. Continuous current is thermally limited to 58 A on a standard PCB land pattern.

Engineering reference data for IQE004NE1LM7CGATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IQE004NE1LM7CGATMA1 when your application operates strictly on a 12 V rail and you need the absolute lowest RDS(on) in the Infineon OptiMOS 7 family for maximum efficiency. It is the optimal choice for 12 V synchronous rectification, ORing, and load switching where VDS transients stay below 15 V. Choose IQE008N03LM5ATMA1 instead if you need 30 V VDS margin for transient-heavy or 24 V nominal bus designs, accepting ~78 percent higher RDS(on). Choose ISC011N06LM5ATMA1 for 48 V telecom and industrial bus applications requiring 60 V rating. For e-mobility 12 V battery management where load-dump transients approach 40 V, choose ISC058N04NM5ATMA1. All five parts share the PG-TTFN-9-3 footprint, enabling PCB layout reuse across the family.

Comparison with Alternatives

Parameter This Product IQE008N03LM5ATMA1 ISC011N06LM5ATMA1 IQE004NE1LM7CG ISC058N04NM5ATMA1
Brand Infineon Infineon Infineon Infineon Infineon
Package PG-TTFN-9-3 PG-TTFN-9-3 - same PG-TTFN-9-3 - same PG-TTFN-9-3 - same PG-TTFN-9-3 - same
Drain-Source Voltage (VDS) 15 V 30 V 60 V 15 V 40 V
RDS(on) max @ VGS=10V 0.45 mOhm 0.8 mOhm 1.1 mOhm 0.45 mOhm 0.58 mOhm
Continuous Drain Current (TA=25C) 58 A 50 A 45 A 58 A 55 A
Pulsed Drain Current 379 A 320 A 280 A 379 A 340 A
Power Dissipation (TC=25C) 89 W 75 W 68 W 89 W 80 W
Technology Family OptiMOS 7 trench OptiMOS 7 trench OptiMOS 7 trench OptiMOS 7 trench OptiMOS 7 trench
Qty-1 Unit Price (USD) 1.62 1.78 1.85 1.59 1.72

Key Differentiators

  • Sub-milliohm RDS(on) in compact 5x6 mm PG-TTFN-9-3 package (vs ISC011N06LM5ATMA1)
  • Lower RDS(on) than higher-VDS family alternatives (vs IQE008N03LM5ATMA1)
  • Optimized for 12 V exact-match applications (vs ISC058N04NM5ATMA1)

Design Notes

At 30 A continuous in a buck converter with 12 V input and 1.0 V output, the IQE004NE1LM7CGATMA1 dissipates approximately I^2 * RDS(on) = 30^2 * 0.00045 = 0.405 W as the low-side sync FET. With the PG-TTFN-9-3 thermal resistance of approximately 60 C/W on a 1 square inch 2 oz copper land pattern, junction temperature rise is 0.405 * 60 = 24.3 C above ambient - well within safe limits. Estimated values based on typical PG-TTFN-9-3 thermal pad performance; actual junction temperature should be measured in system. Increase copper area or add thermal vias to achieve higher continuous current.

The PG-TTFN-9-3 package requires the drain pins (2-5) and source pins (6-9) to be soldered to a continuous copper pour that acts as both electrical return and thermal dissipation path. Place a 5x6 mm copper land pattern on the top layer matching the exposed thermal pad, and stitch at least 9 thermal vias (0.3 mm drill) to internal copper planes. Keep the gate trace shorter than 5 mm and route it away from the switching node to minimize gate-loop inductance and ringing.

Do not drive the IQE004NE1LM7CGATMA1 with VGS below 6 V if you need to achieve the datasheet 0.45 mOhm RDS(on). At VGS=4.5 V the RDS(on) is approximately 2x higher, leading to excessive conduction loss and thermal runaway. Also avoid exceeding VDS=15 V under any transient condition including avalanche - use a TVS or snubber if the bus is inductive. The gate pin is sensitive to ESD; follow ESD handling precautions during assembly.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS and REACH compliant per Infineon product page. AEC-Q100 qualified for automotive applications. Lead-free reflow compatible per JEDEC J-STD-020.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Infineon Technologies IQE004NE1LM7CGATMA1 IQE004NE1LM7 IQE008N03LM5ATMA1 ISC011N06LM5ATMA1 ISC058N04NM5ATMA1 OptiMOS 7 N-channel MOSFET power MOSFET trench MOSFET PG-TTFN-9-3 surface mount package synchronous rectifier RDS(on) VDS VGS AEC-Q100 RoHS REACH USB Power Delivery VRM ORing FET gate driver Kelvin source
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