IQE013N04LM6SCATMA1 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6SCATMA1 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β ActiveInfineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6SCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.71 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (trench MOSFET) | OptiMOS N-channel trench MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΞ© | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 31 A | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | β |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | 205 A | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 2.5 W | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | 107 W | β |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | β |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | β |
| Package | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: T_J min/max] | -55 Β°C to +175 Β°C |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Part Family | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ) |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |