IQE018N06NM6CGATMA1 vs IPT015N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active
Infineon
IPT015N10NF2SATMA1

IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon

IPT015N10NF2SATMA1 βœ“ Active

Specification Comparison

Parameter IQE018N06NM6CGATMA1 IPT015N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $3.10
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 60V β€”
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 60 V β€”
Continuous Drain Current (I_D, Tc) 178 A β€”
Continuous Drain Current (I_D, Ta) 25 A β€”
R_DS(on) max (V_GS=10 V) 1.8 mΞ© β€”
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 125 W β€”
Package PG-TTFN-9-3 (TOLL/TTFN) PG-HSOF-8-10 (9-pin, 8+tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55 Β°C to +175 Β°C
Technology Trench MOSFET, OptiMOS 6 OptiMOS trench, N-channel enhancement
RoHS Compliance Compliant β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 315 A
Continuous Drain Current (ID, Ta) β€” 35 A
On-Resistance (RDS(on)) at VGS=10V β€” 1.5 mΞ©
Gate-Source Threshold (VGS(th)) β€” 3.8 V at 267 Β΅A
Total Power Dissipation (Ta) β€” 3.8 W
Total Power Dissipation (Tc) β€” 300 W
Gate Drive Voltage (typ) β€” 10 V
Single-Pulse Avalanche Energy β€” [DATA_NEEDED: EAS value]
RoHS Status β€” Compliant

Datasheets & Resources

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