IPT015N10NF2SATMA1 - 100V 315A 1.5mΩ OptiMOS MOSFET | Infineon
MPN: IPT015N10NF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.53 | $4.53 |
| 10 | $4.21 | $42.10 |
| 100 | $3.84 | $384.00 |
| 500 | $3.45 | $1,725.00 |
| 1,000 | $3.1 | $3,100.00 |
Drop-in alternatives for IPT015N10NF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IPT017N12NM6ATMA1
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View Datasheet →BSC070N10NS5ATMA1
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View Datasheet →VBGQT1101
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View Datasheet →IPT015N10NF2SATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 315 A |
| Continuous Drain Current (ID, Ta) | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | 3.8 W |
| Total Power Dissipation (Tc) | 300 W |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-HSOF-8-10 (9-pin, 8+tab) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement |
| Gate Drive Voltage (typ) | 10 V |
| RoHS Status | Compliant |
IPT015N10NF2SATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (connected to exposed tab) |
| Pin 2 | Source — Source terminal (connected to exposed tab) |
| Pin 3 | Source — Source terminal (connected to exposed tab) |
| Pin 4 | Source — Source terminal (connected to exposed tab) |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | Source — Source terminal (connected to exposed tab) |
| Pin 7 | Source — Source terminal (connected to exposed tab) |
| Pin 8 | Source — Source terminal (connected to exposed tab) |
| Pin 9 | Drain (Tab) — Drain terminal and thermal pad (exposed tab) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPT015N10NF2SATMA1 is suitable for 6 applications: High-Current SMPS Primary Switch, 48V Mild-Hybrid eMobility Bus Converter, BLDC / PMSM Motor Drive Three-Phase Bridge, Battery Management System (BMS) High-Current Path, Hot-Swap / OR-ing Controller Switch, Industrial Welding and Plasma-Cut Inverter.
High-Current SMPS Primary Switch
The IPT015N10NF2SATMA1's 1.5 mΩ RDS(on) at 10 V VGS and 315 A continuous drain current at Tc make it an excellent primary-side switch in 48 V-input telecom and server SMPS designs switching at 50–100 kHz. The 100 V VDS rating comfortably covers 72 V nominal bus plus inductive transients from 1:1 or 2:1 turns-ratio transformers, while the source-down HSOF-8 tab routes up to 100 A of average drain current directly into PCB copper without bond-wire inductance. Compared to a TO-220 or D²PAK alternative, this part reduces conduction loss by ~40 % at 100 A and shrinks the primary-side footprint, allowing higher power density in 1U and 2U server rectifiers. Source-pin layout simplifies gate-drive return-path design and reduces dv/dt-induced ringing in hard-switched PFC and LLC topologies.
Recommended
48V Mild-Hybrid eMobility Bus Converter
In 48 V mild-hybrid eMobility systems the IPT015N10NF2SATMA1 serves as the synchronous-rectifier MOSFET in 48 V to 12 V buck converters carrying up to 100 A continuous. The 100 V VDS rating provides ample margin for 48 V transients up to 52 V plus inductive ringing on the 12 V output side, while the 1.5 mΩ RDS(on) reduces rectifier-side conduction loss by ~30 % versus the prior-generation 3 mΩ D²PAK part. The -55 °C to +175 °C operating range and source-down HSOF-8 footprint allow two-sided PCB cooling that survives under-hood ambient swings. Validated SOA at 100 V and 200 A pulsed (1 ms) supports engine-start and load-dump profiles common in 48 V bus systems.
Recommended
BLDC / PMSM Motor Drive Three-Phase Bridge
For three-phase brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) drives in industrial automation, the IPT015N10NF2SATMA1 provides six low-side switches capable of >100 A peak per phase. The 1.5 mΩ RDS(on) minimizes I²R loss during high-torque operation, extending continuous torque by ~15 % versus a 3 mΩ alternative, while the 100 V VDS covers 48 V and 60 V bus motors with adequate avalanche margin for back-EMF transients at commutation. The HSOF-8 source-down footprint enables a compact three-phase inverter stage on a 60 mm square PCB and supports double-sided cooling via the exposed tab. The part is widely used in industrial servo drives, AGV traction, and CNC spindle motor inverters up to 10 kW.
Recommended
Battery Management System (BMS) High-Current Path
In battery management systems for power tools, garden equipment, and energy storage, the IPT015N10NF2SATMA1 serves as the protection MOSFET in series with battery cells carrying up to 200 A continuous discharge. The 1.5 mΩ RDS(on) minimizes the voltage drop across the protection switch (300 mV at 200 A) which directly preserves battery runtime by reducing wasted power in the protection path. The 100 V VDS supports 10S–20S lithium packs with headroom, and the 175 °C junction temperature maximum allows sustained operation near full power. The HSOF-8 footprint and exposed thermal pad enable pack-internal mounting with PCB-side cooling, while the low threshold voltage of 3.8 V ensures compatibility with 3.3 V MCU-driven gate drives.
Recommended
Hot-Swap / OR-ing Controller Switch
The IPT015N10NF2SATMA1 is well-suited for 48 V telecom hot-swap and OR-ing switches where it carries the full bus current into backplane loads. Its 1.5 mΩ RDS(on) limits steady-state voltage drop to less than 150 mV at 100 A, preserving efficiency in N+1 redundant supplies. The 315 A pulsed rating supports inrush transients during hot-swap events, and the 100 V VDS provides a 30 % margin over typical 48 V nominal / 60 V transient telecom envelopes. The source-down HSOF-8 footprint simplifies routing of high-current planes, while the wide operating temperature range supports outdoor telecom cabinet installations. In OR-ing applications two devices back-to-back achieve bidirectional blocking without an additional series diode.
Recommended
Industrial Welding and Plasma-Cut Inverter
In industrial welding and plasma-cut inverters the IPT015N10NF2SATMA1 functions as the primary-side or secondary-side switch handling pulsed currents exceeding 300 A at low duty cycle. The 315 A continuous drain current rating at Tc and the low RDS(on) of 1.5 mΩ allow the inverter to deliver >20 kW peak welding current while keeping junction temperature rise within safe limits. The 100 V VDS rating covers secondary-rectifier service in 60 V-class welding outputs and primary-side switching in rectified 400 V input inverters via clamping. The HSOF-8 source-down footprint supports high-density PCB layouts with double-sided cooling that survive the harsh thermal-cycling environment of industrial welding. The part's avalanche ruggedness adds margin against inductive load transients during arc strikes.
Recommended
Recommended Products Summary
Engineering reference data for IPT015N10NF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT017N12NM6ATMA1 | IPB021N10NM5LF2ATMA1 | BSC070N10NS5ATMA1 | VBGQT1101 | IPTG025N15NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | PG-HSOF-8-10 | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 (TOLL) - same | PG-HSOF-8-10 - same |
| Drain-Source Voltage (VDS) | 100 V | 120 V | 100 V | 100 V | 100 V | 150 V |
| Continuous Drain Current (ID, Tc) | 315 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) at VGS=10V | 1.5 mΩ | 1.7 mΩ | 2.1 mΩ | 7.0 mΩ | [DATA_NEEDED] | 2.5 mΩ |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc) | 300 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) |
Key Differentiators
- Lowest RDS(on) in the 100 V HSOF-8 Infineon family at this generation (vs BSC070N10NS5ATMA1)
- Source-down HSOF-8 footprint with tab as drain (vs IPB021N10NM5LF2ATMA1)
- Domestic Chinese-source drop-in option available (vs VBGQT1101)
Design Notes
Estimated: at 100 A continuous drain current and RDS(on)=1.5 mΩ, the IPT015N10NF2SATMA1 dissipates approximately 15 W conduction loss. With the HSOF-8 source-down package thermal resistance of approximately 0.5 °C/W to the PCB tab, and assuming a 100 mm² copper pour on both sides of a 2 oz PCB, the junction-to-ambient thermal resistance can be lowered to ~20 °C/W. This keeps the 15 W dissipation within a 40 °C junction temperature rise at 25 °C ambient, well below the 175 °C absolute maximum. Designers should compute thermal resistance on their actual board stackup using Infineon's HSOF-8 thermal model rather than relying on the datasheet's reference PCB.
The source-down HSOF-8 package eliminates the traditional source-bond-wire inductance by routing source current directly into the PCB copper plane via the exposed tab. To exploit this benefit, the drain copper island must be sized to handle up to 315 A pulsed with minimal DC voltage drop, and the gate-drive loop must be kept tight to avoid dv/dt-induced ringing. Recommended: place the gate-drive resistor within 5 mm of the gate pin, use a Kelvin-source connection (where the source-sense pin is connected to the gate-driver ground separately from the power source), and use a 4-layer PCB with at least 2 oz copper on the top layer for the drain tab. Avoid vias in the drain tab area where possible to minimize spreading resistance.
Do not use VGS=5 V drive at full rated current: at 5 V VGS the IPT015N10NF2SATMA1 RDS(on) increases to approximately 2.5–3.0 mΩ, doubling conduction loss at 100 A load and pushing the part toward thermal shutdown. Always use a 10 V gate driver (or 8 V minimum for moderate-load conditions). Also avoid single-pulse avalanche operation beyond the rated EAS, which can occur when interrupting inductive loads without a freewheeling path. For transformer-coupled SMPS designs always include a primary-side RCD or TVS clamp to absorb leakage-inductance energy at turn-off. Finally, confirm that the gate-driver's negative drive capability (typically -2 V to -5 V) is sufficient to prevent parasitic turn-on from Miller current in bridge-topology applications.
Compliance Information
RoHS and lead-free per Infineon product page. Standard industrial grade; AEC-Q100 automotive variants use different Infineon part-number suffixes (e.g. IAUZ-series). Halogen-free per the OptiMOS family datasheet.
