IQE018N06NM6CGATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE018N06NM6CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, Tc) | 178 A | β |
| Continuous Drain Current (I_D, Ta) | 25 A | β |
| R_DS(on) max (V_GS=10 V) | 1.8 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 125 W | β |
| Package | PG-TTFN-9-3 (TOLL/TTFN) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C (junction, Tj) |
| Technology | Trench MOSFET, OptiMOS 6 | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | Compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | β | Compliant |
| Configuration | β | Single N-channel, Source-Down |