IQE018N06NM6CGATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE018N06NM6CGATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 60V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, Tc) | 178 A | β |
| Continuous Drain Current (I_D, Ta) | 25 A | β |
| R_DS(on) max (V_GS=10 V) | 1.8 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 125 W | β |
| Package | PG-TTFN-9-3 (TOLL/TTFN) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 6 |
| RoHS Compliance | Compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |
| RoHS Status | β | Compliant |