IQE018N06NM6SCATMA1 vs IQE018N06NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6SCATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IQE018N06NM6SCATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC | 178 A | — |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 125 W | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-WHSON-8-1 (5x6 mm) | PG-TTFN-9-3 (TOLL/TTFN) |
| Operating Temperature Range | -55 °C to +175 °C (TJ) | -55C to +175C (junction) |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | — | Compliant |