IQE018N06NM6SCATMA1 vs IQE018N06NM6CGATMA1 Comparison

Detailed side-by-side comparison of IQE018N06NM6SCATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE018N06NM6SCATMA1

IQE018N06NM6SCATMA1 - 60V 1.8mΞ© OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6SCATMA1 βœ“ Active
Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active

Specification Comparison

Parameter IQE018N06NM6SCATMA1 IQE018N06NM6CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $1.21
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 60 V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) Max 60 V β€”
Continuous Drain Current (ID) at TA=25Β°C 25 A β€”
Continuous Drain Current (ID) at TC 178 A β€”
On-Resistance RDS(on) Max 1.8 mΞ© at VGS=10 V β€”
Gate Threshold Voltage VGS(th) Typ 3.3 V β€”
Power Dissipation (TA) 2.5 W β€”
Power Dissipation (TC) 125 W β€”
Mounting Type Surface Mount Surface Mount
Package PG-WHSON-8-1 (5x6 mm) PG-TTFN-9-3 (TOLL/TTFN)
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55C to +175C (junction)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Product Family β€” OptiMOS 6 60V
Channel Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 60 V
Continuous Drain Current (I_D, Tc) β€” 178 A
Continuous Drain Current (I_D, Ta) β€” 25 A
R_DS(on) max (V_GS=10 V) β€” 1.8 mΞ©
Gate Threshold Voltage (V_GS(th)) β€” 3.3 V (logic-level compatible)
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 125 W
Technology β€” Trench MOSFET, OptiMOS 6
RoHS Compliance β€” Compliant

Datasheets & Resources

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