IQE018N06NM6SCATMA1 vs IQE018N06NM6CGATMA1 比較
詳細並排比較 IQE018N06NM6SCATMA1 由 Infineon 與 IQE018N06NM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE018N06NM6SCATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC | 178 A | — |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 125 W | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-WHSON-8-1 (5x6 mm) | PG-TTFN-9-3 (TOLL/TTFN) |
| 工作溫度範圍 | -55 °C to +175 °C (TJ) | -55C to +175C (junction) |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | — | Compliant |