IQE020N04LM6CGATMA1 vs IPT067N20NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and IPT067N20NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveInfineon
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $4.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +150C (junction) |
| Technology | OptiMOS 6, TrenchFET-class | Trench-gate OptiMOS 6 silicon |
| Configuration | Single N-Channel, source-down | Single N-channel |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL moisture sensitivity level] |
| Product Family | β | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25C | β | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | β | 137 A |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Power Dissipation (PD) at TC=25C | β | 300 W |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | β | Yes |