IQE020N04LM6CGATMA1 vs IQE012N03LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and IQE012N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveInfineon
IQE012N03LM5CGSCATMA1
IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $1.55 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-WHTFN-9-1 (PQFN 3.3 Γ 3.3 mm Source-Down dual-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS 5 (trench MOSFET) |
| Configuration | Single N-Channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, floor life unlimited) |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) @ Ta | β | 34 A |
| Continuous Drain Current (ID) @ Tc | β | 224 A |
| Maximum RDS(on) @ VGS=10V | β | 1.15 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ, per Merlin listing) |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes |